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    PTF180901F Search Results

    PTF180901F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF180901F Infineon Technologies GSM/EDGE RF Power FET Original PDF

    PTF180901F Datasheets Context Search

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    P220E

    Abstract: infineon smd package
    Text: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF180901E PTF180901F 90-watt P220E infineon smd package

    PTF180101S

    Abstract: PTF180901E PTF180901F
    Text: Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 Performance One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain


    Original     		PDF PTF180901 GSM/EDGE/CDMA2000 B134-H8296-X-0-7600 PTF180101S PTF180901E PTF180901F

    Untitled

    Abstract: No abstract text available
    Text: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF180901 PTF180901