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    PTFA091201HL Search Results

    PTFA091201HL Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA091201HL Infineon Technologies 700 MHz to 1000 MHz; Package: PG-64248-2; Flange Type: Earless; Matching: I/O; Frequency Band: 920.0 - 960.0 MHz; P1dB (typ): 120.0 W; Supply Voltage: 28.0 V; Original PDF
    PTFA091201HL V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 120W PG-64248-2 Original PDF
    PTFA091201HLV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 120W PG-64248-2 Original PDF
    PTFA091201HL V1 R250 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 120W PG-64248-2 Original PDF
    PTFA091201HLV1R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 120W PG-64248-2 Original PDF

    PTFA091201HL Datasheets Context Search

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    BCP56

    Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201GL PTFA091201HL PTFA091201GL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 BCP56 LM7805 A0912

    po111

    Abstract: ELNA capacitor 100 uf 50v transistor a09
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201GL PTFA091201HL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 po111 ELNA capacitor 100 uf 50v transistor a09