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    PTFC210202FC Search Results

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    PTFC210202FC Price and Stock

    MACOM PTFC210202FC-V1-R0

    RF MOSFET LDMOS 28V H-37248-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFC210202FC-V1-R0 30 1
    • 1 $48.4
    • 10 $46.062
    • 100 $46.062
    • 1000 $46.062
    • 10000 $46.062
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    Mouser Electronics PTFC210202FC-V1-R0 26
    • 1 $44.88
    • 10 $44.23
    • 100 $44.23
    • 1000 $44.23
    • 10000 $44.23
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    Infineon Technologies AG PTFC210202FCV1XWSA1

    RF MOSFET LDMOS 28V H-37248-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFC210202FCV1XWSA1 Tray
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    MACOM PTFC210202FC-V1-R250

    RF MOSFET LDMOS 28V H-37248-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFC210202FC-V1-R250 Reel 250
    • 1 -
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    • 1000 $52.10592
    • 10000 $52.10592
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    Mouser Electronics PTFC210202FC-V1-R250
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    PTFC210202FC Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFC210202FC-V1-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4 Original PDF
    PTFC210202FCV1R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4 Original PDF
    PTFC210202FC-V1-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTFC210202FCV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTFC210202FCV1XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTFC210202FC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's


    Original
    PDF PTFC210202FC PTFC210202FC 10-watt

    Untitled

    Abstract: No abstract text available
    Text: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's


    Original
    PDF PTFC210202FC PTFC210202FC 10-watt

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original
    PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    PDF