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    Text: • bbS3S31 Q02M355 330 H A P X N AMER PHILIPS/DISCRETE BAV70 b7E J> JV SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists o f tw o diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.


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    bbS3S31 Q02M355 BAV70 BAV70 BAW62 PDF