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    GS 069 LF

    Abstract: BUK437-400A BUK437-400B QDS031D 7648a
    Text: N AMER P H I L I P S / D I S C R E T E SSE D bbSBTBl QDa031Q s BUK437-400A BUK437-400B PowerMOS transistor T-37-/5T G EN ER A L D ESC R IP TIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    bSBT31 QDS031D BUK437-400A BUK437-400B T-37-/5" BUK437 -400A -400B OT-93; GS 069 LF 7648a PDF