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    EMITTER IR 940NM 50MA RADIAL
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    QEC112 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    QEC112 Fairchild Semiconductor PLASTIC INFRARED LIGHT EMITTING DIODE Original PDF
    QEC112 Fairchild Semiconductor GaAs Infrared Emitting Diode; Package: T-1, 3mm Diode; No of Pins: 2; Container: Bulk Original PDF
    QEC112 Fairchild Semiconductor Plastic Infrared Light Emitting Diode Original PDF
    QEC112 QT Optoelectronics GAAS INFRARED EMITTING DIODE Scan PDF

    QEC112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CX158

    Abstract: pressure sensor 7106 gps to microcontroller ms 7109 10MHz-other
    Text: CALIBRATED DUAL CRYSTAL OSCILLATORS CDXO QEC112-AH TIME &FREQUENCY CALIBRATED DUAL CRYSTAL OSCILLATORS CDXO Description QEC 112 Y R A N I M I L E R P This oscillator is a compromise between the performance of an OCXO and those of a MCXO over wide temperature ranges. The main


    Original     		PDF QEC112-AH CX158 pressure sensor 7106 gps to microcontroller ms 7109 10MHz-other

    Untitled

    Abstract: No abstract text available
    Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor


    Original     		PDF QEC112, QEC113 940nm QEC11X 940nm QEC113

    L14F1 phototransistor datasheet

    Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
    Text: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940


    Original     		PDF QEC112 QEC113 QEC121 QEC122 QEC123 QED233 QED234 QED633 QED634 QED121 L14F1 phototransistor datasheet L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor

    QED234

    Abstract: ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123
    Text: Optoelectronics Plastic Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEC112 6 30 1.7 10 24 940 QEC113 14 – 1.7 10 24 940 QEC121 14 – 1.9


    Original     		PDF QEC112 QEC113 QEC121 QEC122 QEC123 QED233 QED234 QED633 QED634 QED121 QED234 ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123

    QEC112

    Abstract: QEC113 QEC11X QSCXXX
    Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode Features Description • ■ ■ ■ ■ ■ ■ The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. λ = 940 nm PACKAGE DIMENSIONS Chip material = GaAs Package type: T-1 3 mm


    Original     		PDF QEC112, QEC113 QEC11X QEC113 QEC112 QSCXXX

    QEC11X

    Abstract: QEC112 QEC113 QSC112
    Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEC112 QEC113 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) SCHEMATIC 0.018 (0.46) SQ. (2X)


    Original     		PDF QEC112 QEC113 QEC11X QSC112 DS300334 QEC112 QEC113 QSC112

    QSCXXX

    Abstract: GaAs 850 nm Infrared Emitting Diode QEC112 QEC113 QEC11X QEC113.0059
    Text: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor


    Original     		PDF QEC112, QEC113 940nm QEC11X 940nm QEC113 QSCXXX GaAs 850 nm Infrared Emitting Diode QEC112 QEC113.0059

    QRB1134

    Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
    Text: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6


    Original     		PDF 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 QRB1134 H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158

    4n35 optocoupler spice model

    Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, 4n35 optocoupler spice model L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011

    MAN6760 function

    Abstract: KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026
    Text: Date Created: 2/12/2004 Date Issued: 2/19/2004 PCN # 20040702 INFORMATION ONLY NOTIFICATION This is to inform you that a minor change is being made to the following product s . This notification is for your information only. Updated process quality documentation, such as FMEAs and Control Plans, are available


    Original     		PDF MAN6730 MAN6760 MAN6880 MAN6940 MAN6975 MAN6R10 MAN73A MAN8010 MAN8240 MAN8610 MAN6760 function KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026

    L14F1 phototransistor datasheet

    Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
    Text: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions


    Original     		PDF SE-171 L14F1 phototransistor datasheet l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3

    Optocoupler H22A1

    Abstract: how to interface optocoupler with triac a 2631 optocoupler QRE1113 QRD1114 2631 optocoupler Optocoupler with triac rain SENSOR MOC3023 H22A1
    Text: OPTOELECTRONICS A P P L I C AT I O N S BROCHURE IR Components Optocouplers LED Displays LED Lamps 2001 Multi-Market Products for a Changing World TM OPTOELECTRONICS APPLICATIONS BROCHURE TABLE OF CONTENTS Description Page VCR, Camcorder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF D-82256 Optocoupler H22A1 how to interface optocoupler with triac a 2631 optocoupler QRE1113 QRD1114 2631 optocoupler Optocoupler with triac rain SENSOR MOC3023 H22A1

    QED223

    Abstract: diode Sr 203
    Text: Plastic Light Emitting Diodes T-1 3 mm Diode Package 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) Part Number Ie @ 100 mA IF (mW/sr) min max VF @ 100 mA IF (V) max IR @ 5 V VR (µA)


    Original     		PDF QEC112 QEC113 QEC121 QEC122 QEC123 QED233 QED234 QED633 QED223 diode Sr 203

    Untitled

    Abstract: No abstract text available
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 PACKAGE DIMENSIONS DESCRIPTION .126 3.20 .106 (2.69) REFERENCE SURFACE r .203 (5.16) .183(4.65) .030 (0.76) NOM _L .042 (1.07) X ±.010 (±.25) CATHODE t .800 (20.3) MIN 1 I .050 (1.27) REF I The QEC11X is a 940 nm GaAs LED encapsulated in a


    OCR Scan     		PDF QEC112/113 QEC11X QSC11X 000L270

    ST2130

    Abstract: QSC113 QEC11X QSC112 diode 465 nm 5 mm tinted
    Text: fey GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3.20 .106 (2.69) R EFER EN C E SU RFACE Th e QEC11X is a 94 0 nm GaAs LED encapsulated in a clear, peach tinted, plastic T-1 package. r .203 (5.16) .183 (4.65)


    OCR Scan     		PDF QEC112/113 ST2130 QEC11X QSC11X mA167' QSC113 mW/10Â mA1671 ST2130 QSC112 diode 465 nm 5 mm tinted

    Untitled

    Abstract: No abstract text available
    Text: E Q GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3 20 .106 (2.69) R EFER EN C E SU RFACE r .203 (5.16) 183(4.65) .030 (0.76) NOM J .0 4 2 (1 .0 7 ) ± 010 (± 25) I .8 0 0 (2 0 .3 ) MIN * 1 The QEC11X is a 940 nm GaAs LED encapsulated in a


    OCR Scan     		PDF QEC112/113 QEC11X QSC11X

    ST2130

    Abstract: No abstract text available
    Text: [*ö GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS 126 3.20 REFERENCE SURFACE 203 (5.16) 183(4.65) CATHODE J .042(1.07) ±.010 (±.25) .050 (1.27) REF t .800 (20.3) MIN >/ * * -ANODE J .018(0.46) SQ ±.003 (±0.08)'


    OCR Scan     		PDF QEC112/113 QEC11X QSC11X ST2130

    Untitled

    Abstract: No abstract text available
    Text: [ * o OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES t E m issio n T-1 3 mm A n q ie • 2 Power i - 1 T W}/ n i i i ? im AI/IV Tim in « ì x u rliti rn a * m ax 940 nm GaAs Í 76'i NOM .062 1.1.32 .032 (-052) !r /VP; ¿di.-iní “ T 800 (20.3)


    OCR Scan     		PDF QEC112 QEC113 QEC121 QEC122 QEC123 T-13/4 QED233 QED234

    Untitled

    Abstract: No abstract text available
    Text: GEO OPTOELECTRONICS PLASTIC INFRARED LIGHT EM ITTIN G DIODES E m is sio n T-1 3 mm A n g le @ Part Num ber •e R a d ia n t In te n s ity 1/2 P o w e r V F/ I F ■r ' V r V /(m A | ( mA )/ i v i m in max u n its m ax max 30 mW/sr 1.50/20 10/5 1 — mW/sr


    OCR Scan     		PDF QEC112 QEC113 QEC121 QEC122 QEC123 T-13/4

    MAN-8610

    Abstract: CNW82 HLMPD150A CNY17GF-1
    Text: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA


    OCR Scan     		PDF 1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 740L6000 740L6001 740L6011 MAN-8610 CNW82 HLMPD150A CNY17GF-1

    ORB1134

    Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
    Text: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22


    OCR Scan     		PDF 1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 6N139 740L6000 740L6001 ORB1134 H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB OPB704 MAN4710 1LP6