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    QED422 Search Results

    QED422 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    QED422 Fairchild Semiconductor Plastic Infrared Light Emitting Diode Original PDF
    QED422 Fairchild Semiconductor PLASTIC INFRARED LIGHT EMITTING DIODE Original PDF
    QED422 QT Optoelectronics AIGAAS INFRARED EMITTING DIODE Scan PDF

    QED422 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    light emitting diode

    Abstract: QED422 QEC423 QEC422 QED423
    Text: QED422, QED423 Plastic Infrared Light Emitting Diode Features Description • ■ ■ ■ ■ ■ ■ The QED422/423 is an 880 nm AlGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. λ= 880 nm Chip material = AlGaAs Package type: Plastic TO-46


    Original     		PDF QED422, QED423 QED422/423 QSD722/723/724 QED423 light emitting diode QED422 QEC423 QEC422

    schematic diagram of infrared

    Abstract: QEC522 QEC523 QED422 QED423
    Text: PLASTIC INFRARED LIGHT EMITTING DIODE QED422 QED423 PACKAGE DIMENSIONS REFERENCE SURFACE 0.190 4.83 0.178 (4.52) 0.220 (5.59) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM Ø 0.215 (5.46) NOM 45° SCHEMATIC 0.020 (0.51) SQ. (2X)


    Original     		PDF QED422 QED423 QED422/423 QSD722/723/724 schematic diagram of infrared QEC522 QEC523 QED422 QED423

    QRB1134

    Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
    Text: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6


    Original     		PDF 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 QRB1134 H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158

    Untitled

    Abstract: No abstract text available
    Text: Plastic Light Emitting Diodes TO-46 Plastic Diode Package REFERENCE SURFACE 0.190 (4.83) 0.178 (4.52) 0.220 (5.59) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM Ø 0.215 (5.46) NOM Part Number Ie @ 100 mA IF (mW/sr) min max VF @ 100 mA IF


    Original     		PDF QED422 QED423 QED522 QED523

    QED234

    Abstract: ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123
    Text: Optoelectronics Plastic Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEC112 6 30 1.7 10 24 940 QEC113 14 – 1.7 10 24 940 QEC121 14 – 1.9


    Original     		PDF QEC112 QEC113 QEC121 QEC122 QEC123 QED233 QED234 QED633 QED634 QED121 QED234 ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123

    MAN6760 function

    Abstract: KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026
    Text: Date Created: 2/12/2004 Date Issued: 2/19/2004 PCN # 20040702 INFORMATION ONLY NOTIFICATION This is to inform you that a minor change is being made to the following product s . This notification is for your information only. Updated process quality documentation, such as FMEAs and Control Plans, are available


    Original     		PDF MAN6730 MAN6760 MAN6880 MAN6940 MAN6975 MAN6R10 MAN73A MAN8010 MAN8240 MAN8610 MAN6760 function KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026

    L14F1 phototransistor datasheet

    Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
    Text: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions


    Original     		PDF SE-171 L14F1 phototransistor datasheet l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3

    qed234

    Abstract: QED422
    Text: rsra AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED422/423 PACKAGE DIMENSIONS The QED42X is an 880nm AIGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. i_.190 4.83 _j REFERENCE SURFACE FEATURES 0.030 (0.76) NOM CATHODE .800 (20.3)


    OCR Scan     		PDF QED422/423 QED42X 880nm QSD42X OTHE10Â mA1671 QED234 mW/10Â QED422

    Untitled

    Abstract: No abstract text available
    Text: EO AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED422/423 PACKAGE DIMENSIONS DESCRIPTION Th e Q E D 42X is an 88 0n m AIG aA s LED encapsulated in a • .1 9 0 4 8 3 . clear, purple tinted, plastic T O -4 6 package. FEATURES Tight production Ee distribution.


    OCR Scan     		PDF QED422/423 QED42X ST2135

    Untitled

    Abstract: No abstract text available
    Text: ¡£Xj AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED422/423 PACKAGE DIMENSIONS DESCRIPTION The QED42X is an 880nm AIGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. i_ .1 9 0 4 .8 3 _ i REFERENCE^ SURFACE n FEATURES 0.030 (0.76)


    OCR Scan     		PDF QED422/423 QED42X 880nm QSD42X

    em 483

    Abstract: No abstract text available
    Text: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED422/423 PACKAGE DIMENSIONS I .190 483 . DESCRIPTION Th e Q E D 42X is an 880nm AIGaAs LED en capsulated in a clear, purple tinted, plastic T O -4 6 package. REFERENCE, SURFACE II FEATURES Tight production E„ distribution.


    OCR Scan     		PDF QED422/423 880nm 74bbflSl em 483

    Untitled

    Abstract: No abstract text available
    Text: OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES T-1 3 mm Part Number 76 NOM jr~r le Angle @ 1/2 Power Radiant Intensity min max units V F/IF (V)l(mA) max I r/V r (ViA)/(V) max Notes 940 nm GaAs \ .052(1 32) .032 (.082) Emission JT | QEC112 ±8° 6


    OCR Scan     		PDF QEC112 QEC113 QEC121 QEC122 QEC123 QED233 QED234 53IODES 100mA

    Untitled

    Abstract: No abstract text available
    Text: [ * o OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES t E m issio n T-1 3 mm A n q ie • 2 Power i - 1 T W}/ n i i i ? im AI/IV Tim in « ì x u rliti rn a * m ax 940 nm GaAs Í 76'i NOM .062 1.1.32 .032 (-052) !r /VP; ¿di.-iní “ T 800 (20.3)


    OCR Scan     		PDF QEC112 QEC113 QEC121 QEC122 QEC123 T-13/4 QED233 QED234

    se113

    Abstract: No abstract text available
    Text: INFRARED COMPONENTS AND ASSEMBLIES opmLEcmmcs INFRARED COMPONENTS AND ASSEMBLIES Alphanumeric Product Listing Product Page Product Page Product Page 1N6264 . .3-127 1N6265 . . 3-131 1N6266 . . 3-135


    OCR Scan     		PDF H22A2 H22A3 H22A4 H22A5 H22A6 1N6264 1N6265 1N6266 BPW36 BPW37 se113

    MAN-8610

    Abstract: CNW82 HLMPD150A CNY17GF-1
    Text: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA


    OCR Scan     		PDF 1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 740L6000 740L6001 740L6011 MAN-8610 CNW82 HLMPD150A CNY17GF-1

    ORB1134

    Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
    Text: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22


    OCR Scan     		PDF 1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 6N139 740L6000 740L6001 ORB1134 H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB OPB704 MAN4710 1LP6