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    BUK454-600A

    Abstract: 1-fjv BUK454-600B T0220AB BUK454-600
    Text: N AMER P H ILIP S /D IS C R E TE 2SE J> m t . bS3 * 13 1 QG2047S 4 • PowerMOS transistor BUK454-600A BUK454-600B r - 37-/1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    BUK454-600A BUK454-600B BUK454 -600A -600B T-39-17 1-fjv T0220AB BUK454-600 PDF