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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0651DPB R07DS0076EJ0102 Previous: REJ03G1765-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0651DPB R07DS0076EJ0102 REJ03G1765-0101) PTZZ0005DA-A curr9044

    RJK0651DPB

    Abstract: RJK0651DPB-00-J5 rjk0651 MEANS
    Text: Preliminary Datasheet RJK0651DPB R07DS0076EJ0102 Previous: REJ03G1765-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0651DPB R07DS0076EJ0102 REJ03G1765-0101) PTZZ0005DA-A Aval9044 RJK0651DPB RJK0651DPB-00-J5 rjk0651 MEANS