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Catalog Datasheet	MFG & Type	PDF	Document Tags
RJH60D0DPM-00 Abstract: No abstract text available Text: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJH60D0DPM R07DS0156EJ0200 PRSS0003ZA-A RJH60D0DPM-00

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RJH60D0DPM-00

Abstract: No abstract text available
Text: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Original

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RJH60D0DPM R07DS0156EJ0200 PRSS0003ZA-A RJH60D0DPM-00