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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60D0DPE R07DS0172EJ0100 PRSS0004AE-B Junctio9044

    30g 122 igbt

    Abstract: rjp60d RJp60 RJP60D0DPE-00-J3 rjp6
    Text: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60D0DPE R07DS0172EJ0100 PRSS0004AE-B impedanc9044 30g 122 igbt rjp60d RJp60 RJP60D0DPE-00-J3 rjp6