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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz


    Original     		PDF BB502M R07DS0284EJ0600 REJ03G0833-0500) 200pF, OT-143Rmod) PLSP0004ZA-A BB502M

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz


    Original     		PDF BB502M R07DS0284EJ0600 REJ03G0833-0500) 200pF, OT-143Rmod) PLSP0004ZA-A BB502M