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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500 Previous: REJ03G1278-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A)  Low drive current  High speed switching


    Original     		PDF RQK0605JGDQA R07DS0309EJ0500 REJ03G1278-0400) PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500 Previous: REJ03G1278-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A)  Low drive current  High speed switching


    Original     		PDF RQK0605JGDQA R07DS0309EJ0500 REJ03G1278-0400) PLSP0003ZB-A