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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL5013DPE R07DS0359EJ0200 Previous: REJ03G1755-0100 Rev.2.00 Apr 18, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C)


    Original     		PDF RJL5013DPE R07DS0359EJ0200 REJ03G1755-0100) PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL5013DPE R07DS0359EJ0200 Previous: REJ03G1755-0100 Rev.2.00 Apr 18, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C)


    Original     		PDF RJL5013DPE R07DS0359EJ0200 REJ03G1755-0100) PRSS0004AE-B