Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0389EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage
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Original
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RJH6087BDPK
R07DS0389EJ0100
PRSS0004ZE-A
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0389EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage
|
Original
|
RJH6087BDPK
R07DS0389EJ0100
PRSS0004ZE-A
|
PDF
|