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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 Previous: REJ03G1798-0100 Rev.2.00 Jun 14, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.32  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)


    Original     		RJL5014DPK R07DS0436EJ0200 REJ03G1798-0100) PRSS0004ZE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 Previous: REJ03G1798-0100 Rev.2.00 Jun 14, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.32  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)


    Original     		RJL5014DPK R07DS0436EJ0200 REJ03G1798-0100) PRSS0004ZE-A PDF