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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6015DPM R07DS0438EJ0200 Previous: REJ03G1752-0100 Rev.2.00 Jun 21, 2012 600V - 21A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.315  typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current


    Original     		PDF RJK6015DPM R07DS0438EJ0200 REJ03G1752-0100) PRSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6015DPM R07DS0438EJ0200 Previous: REJ03G1752-0100 Rev.2.00 Jun 21, 2012 600V - 21A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.315  typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current


    Original     		PDF RJK6015DPM R07DS0438EJ0200 REJ03G1752-0100) PRSS0003ZA-A