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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK4513DPE R07DS0471EJ0200 Previous: REJ03G1586-0100 Rev.2.00 Jun 21, 2012 450V - 16A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.33  typ. (at ID = 8 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		PDF RJK4513DPE R07DS0471EJ0200 REJ03G1586-0100) PRSS0004AE-B

    RJK4513DPE

    Abstract: RJK4513
    Text: Preliminary Datasheet RJK4513DPE R07DS0471EJ0200 Previous: REJ03G1586-0100 Rev.2.00 Jun 21, 2012 450V - 16A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.33  typ. (at ID = 8 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		PDF RJK4513DPE R07DS0471EJ0200 REJ03G1586-0100) PRSS0004AE-B RJK4513DPE RJK4513