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    RJK5012DPP-E0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5012DPP-E0 500V - 12A - MOS FET High Speed Power Switching R07DS0561EJ0100 Rev.1.00 Jun 21, 2012 Features • Low on-resistance RDS on = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK5012DPP-E0 R07DS0561EJ0100 PRSS0003AG-A O-220FP) RJK5012DPP-E0

    RJK5012DPP-E0

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5012DPP-E0 500V - 12A - MOS FET High Speed Power Switching R07DS0561EJ0100 Rev.1.00 Jun 21, 2012 Features • Low on-resistance RDS on = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK5012DPP-E0 R07DS0561EJ0100 PRSS0003AG-A O-220FP) RJK5012DPP-E0