Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJL6018DPK R07DS0816EJ0200 Previous: REJ03G1819-0100 Rev.2.00 Jun 21, 2012 600V - 27A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.22 typ. (at ID = 13.5 A, VGS = 10 V, Ta = 25C)
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Original
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RJL6018DPK
R07DS0816EJ0200
REJ03G1819-0100)
PRSS0004ZE-A
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJL6018DPK R07DS0816EJ0200 Previous: REJ03G1819-0100 Rev.2.00 Jun 21, 2012 600V - 27A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.22 typ. (at ID = 13.5 A, VGS = 10 V, Ta = 25C)
|
Original
|
RJL6018DPK
R07DS0816EJ0200
REJ03G1819-0100)
PRSS0004ZE-A
|
PDF
|