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Untitled Abstract: No abstract text available Text: Data Sheet HAT2206C R07DS1182EJ0600 Previous: REJ03G1238-0500 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS (on) = 65 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices.	Original	HAT2206C R07DS1182EJ0600 REJ03G1238-0500) PWSF0006JA-A Symb2886-9022/9044	PDF

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Abstract: No abstract text available
Text: Data Sheet HAT2206C R07DS1182EJ0600 Previous: REJ03G1238-0500 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS (on) = 65 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices.

Original

HAT2206C R07DS1182EJ0600 REJ03G1238-0500) PWSF0006JA-A Symb2886-9022/9044

PDF