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    NE3509M14

    Abstract: MARKING ZR sdars lna
    Text: Data Sheet NE3509M14 N-Channel GaAs HJ-FET, L to C Band Low Noise R09DS0011EJ0100 Rev.1.00 Amplifier Jan 21, 2011 FEATURES • Super low noise figure and high associated gain high isolation NF = 0.4 dB TYP., Ga = 18.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 2 GHz


    Original     		NE3509M14 R09DS0011EJ0100 NE3509M14-T3 NE3509M14-T3-A NE3509M14 MARKING ZR sdars lna PDF