Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    R09DS0031EJ0100 Search Results

    R09DS0031EJ0100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    atc100a2r4b

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		NE5550979A R09DS0031EJ0100 IEC61000-4-2, NE5550979A NE5550979A-AZ atc100a2r4b PDF