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    RF S-parameters

    Abstract: No abstract text available
    Text: NE3516S02 Data Sheet N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0038EJ0100 Rev.1.00 Apr 16, 2012 Rev.1.00 Apr 16, 2012 FEATURES • Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA


    Original     		NE3516S02 R09DS0038EJ0100 NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D NE3516S02-To NE3516S02 RF S-parameters PDF

    ROGERS DUROID

    Abstract: No abstract text available
    Text: Data Sheet NE3516S02 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 FEATURES • Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA Reference Value


    Original     		NE3516S02 R09DS0038EJ0100 NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D NE3516S02-T1D-A ROGERS DUROID PDF