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    RD01MUS2 Price and Stock

    Mitsubishi Electric RD01MUS2B-T513

    RF-MOSFET 7.2V 527MHz 1.6W SOT89-Pkg. - Gate Prot
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    GLYN GmbH & Co. KG RD01MUS2B-T513 3,000
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    Win Source Electronics RD01MUS2B-T513 127,750
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    Mitsubishi Electric RD01MUS2-501

    RF-MOSFET 7.2V 520MHz 0.8W SOT89
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    GLYN GmbH & Co. KG RD01MUS2-501 100
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    Mitsubishi Electric RD01MUS2B-T113

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics RD01MUS2B-T113 28,585
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    Mitsubishi Electric RD01MUS2-T513

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    Win Source Electronics RD01MUS2-T513 20,200
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    Mitsubishi Electric RD01MUS2-T113

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics RD01MUS2-T113 20,000
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    RD01MUS2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RD01MUS2 Mitsubishi Silicon MOSFET Power Transistor 520MHz,1W Original PDF

    RD01MUS2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GP 839 DIODE

    Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.


    Original     		PDF RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839

    RD01MUS2

    Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems

    GP 809 DIODE

    Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		PDF RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz Nov2011 GP 809 DIODE GP 839 DIODE 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE

    taiyosya

    Abstract: grm188r11h RPC03 RD01MUS2 GRM1882 GRM2162C1H RD07MVS1B GRM1882C1H GRM2162C GRM2162C1H470GD01E
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085-A Date : 24th April 2007 Rev.date : 7th Jan. 2010 Prepared : Y. Takase Confirmed : S. Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz.


    Original     		PDF AN-UHF-085-A RD01MUS2 RD07MVS1B RD01MUS2: RD07MVS1B: 068YD" 400-470MHz RPC03 taiyosya grm188r11h RD01MUS2 GRM1882 GRM2162C1H GRM1882C1H GRM2162C GRM2162C1H470GD01E

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION OUTLINE DRAWING 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.


    Original     		PDF RD01MUS2 520MHz 520MHz RD01MUS2

    RD01MUS2

    Abstract: 627 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from


    Original     		PDF RD01MUS2 520MHz RD01MUS2 520MHz Oct2011 627 DIODE

    GRM1882C1H

    Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz


    Original     		PDF AN-UHF-087-A RD01MUS2 450-527MHz RD01MUS2: RD01MUS2 GRM1882C1H GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A

    RD01MUS2

    Abstract: RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m

    GP 809 DIODE

    Abstract: GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


    Original     		PDF RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz GP 809 DIODE GP 007 DIODE

    3M Touch Systems

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS2 520MHz RD01MUS2 520MHz 3M Touch Systems

    RD01MUS2

    Abstract: RD07MUS2B GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-097-B Date : 13th Mar. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz,Vdd=7.2V


    Original     		PDF AN-UHF-097-B RD01MUS2 RD07MUS2B 400-470MHz RD07MUS2B 086ZE-G" 470MHz AN-UHF-097-B- RD01MUS2 GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C

    RD01MUS2

    Abstract: rpc03 grm188r11h RD07MVS1B taiyo RPC03 micro electronics
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085 Date : 24th April 2007 Prepared : Y. Takase Confirmed : S. Kametani RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz. SUBJECT: SUMMARY: This application note shows the RF Broad band characteristic data Po vs. Frequency


    Original     		PDF AN-UHF-085 RD01MUS2 RD07MVS1B RD01MUS2: RD07MVS1B: 068YD" 400-470MHz RPC03 RPC05 RD01MUS2 rpc03 grm188r11h taiyo RPC03 micro electronics

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053

    AN-UHF-098

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) AN-UHF-098