RD01MUS2 Search Results

RD01MUS2 Price and Stock

Filter by Manufacturer


Mitsubishi Electric RD01MUS2B-T513 RF-MOSFET 7.2V 527MHz 1.6W SOT89-Pkg. - Gate Prot
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
GLYN GmbH & Co. KG	RD01MUS2B-T513		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	RD01MUS2B-T513		250,000			1 - 10 - 100 $0.5492 1000 $0.3662 10000 $0.3662	Buy Now
Mitsubishi Electric RD01MUS2-501 RF-MOSFET 7.2V 520MHz 0.8W SOT89
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
GLYN GmbH & Co. KG	RD01MUS2-501		95			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mitsubishi Electric RD01MUS2B-T113
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	RD01MUS2B-T113		28,585			1 - 10 - 100 $0.813 1000 $0.542 10000 $0.542	Buy Now
Mitsubishi Electric RD01MUS2-T513
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	RD01MUS2-T513		20,200			1 - 10 - 100 $0.551 1000 $0.368 10000 $0.368	Buy Now
Mitsubishi Electric RD01MUS2-T113
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	RD01MUS2-T113		20,000			1 - 10 - 100 $0.65 1000 $0.434 10000 $0.434	Buy Now

RD01MUS2 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RD01MUS2		Mitsubishi	Silicon MOSFET Power Transistor 520MHz,1W		Original	PDF

RD01MUS2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GP 839 DIODE Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.	Original	RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839	PDF
RD01MUS2 Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems	PDF
GP 809 DIODE Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from	Original	RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz Nov2011 GP 809 DIODE GP 839 DIODE 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE	PDF
taiyosya Abstract: grm188r11h RPC03 RD01MUS2 GRM1882 GRM2162C1H RD07MVS1B GRM1882C1H GRM2162C GRM2162C1H470GD01E Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085-A Date : 24th April 2007 Rev.date : 7th Jan. 2010 Prepared : Y. Takase Confirmed : S. Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz.	Original	AN-UHF-085-A RD01MUS2 RD07MVS1B RD01MUS2: RD07MVS1B: 068YD" 400-470MHz RPC03 taiyosya grm188r11h RD01MUS2 GRM1882 GRM2162C1H GRM1882C1H GRM2162C GRM2162C1H470GD01E	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION OUTLINE DRAWING 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.	Original	RD01MUS2 520MHz 520MHz RD01MUS2	PDF
RD01MUS2 Abstract: 627 DIODE Text: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from	Original	RD01MUS2 520MHz RD01MUS2 520MHz Oct2011 627 DIODE	PDF
GRM1882C1H Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz	Original	AN-UHF-087-A RD01MUS2 450-527MHz RD01MUS2: RD01MUS2 GRM1882C1H GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A	PDF
RD01MUS2 Abstract: RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m	PDF
GP 809 DIODE Abstract: GP 007 DIODE Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from	Original	RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz GP 809 DIODE GP 007 DIODE	PDF
3M Touch Systems Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD01MUS2 520MHz RD01MUS2 520MHz 3M Touch Systems	PDF
RD01MUS2 Abstract: RD07MUS2B GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-097-B Date : 13th Mar. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz,Vdd=7.2V	Original	AN-UHF-097-B RD01MUS2 RD07MUS2B 400-470MHz RD07MUS2B 086ZE-G" 470MHz AN-UHF-097-B- RD01MUS2 GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C	PDF
RD01MUS2 Abstract: rpc03 grm188r11h RD07MVS1B taiyo RPC03 micro electronics Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085 Date : 24th April 2007 Prepared : Y. Takase Confirmed : S. Kametani RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz. SUBJECT: SUMMARY: This application note shows the RF Broad band characteristic data Po vs. Frequency	Original	AN-UHF-085 RD01MUS2 RD07MVS1B RD01MUS2: RD07MVS1B: 068YD" 400-470MHz RPC03 RPC05 RD01MUS2 rpc03 grm188r11h taiyo RPC03 micro electronics	PDF
marking 7W 66 Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041 Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15	Original	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041	PDF
RD07MUS2B Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053 Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.	Original	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053	PDF

AN-UHF-098 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15	Original	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) AN-UHF-098	PDF