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Mitsubishi Electric RD06HVF1-101 Trans RF MOSFET N-CH 50V 3A 3-Pin(3+Tab)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	RD06HVF1-101		9,400			1 - 10 - 100 $3.203 1000 $3.203 10000 $3.203	Buy Now

RD06HVF1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RD06HVF1		Mitsubishi	MOS FET type transistor specifically designed for VHF RF power amplifiers applications.		Original	PDF
RD06HVF1-101		Mitsubishi	MOS FET type transistor specifically designed for VHF RF power amplifiers applications.		Original	PDF

RD06HVF1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
rf amplifier broad band Abstract: RD06HVF1 AN-VHF-026-A Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-026-A Date : 22th Nov. 2004 Rev.date : 7th Jan. 2010 Prepared : K.Inaba Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD06HVF1 broad band characteristics for 135-175MHz	Original	PDF	AN-VHF-026-A RD06HVF1 135-175MHz 135MHz-175MHz RD06HVF1 135MHz 175MHz: rf amplifier broad band AN-VHF-026-A
MAR 618 transistor Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz	Original	PDF	RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFth MAR 618 transistor MAR 737 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
TRANSISTOR mosfet 9V Abstract: RD06HHF1 RD06HVF1 high power FET Transistor transistor 6w MOSFET RF POWER TRANSISTOR VHF Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS TENTATIVE Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DRAWING 12.3MIN APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.	Original	PDF	RD06HVF1 175MHz 175MHz RD06HVF1 RD06HHF1 TRANSISTOR mosfet 9V RD06HHF1 high power FET Transistor transistor 6w MOSFET RF POWER TRANSISTOR VHF
transistor d 1557 Abstract: MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RD06HVF1 Marking TRANSISTOR 737 TRANSISTOR mosfet 9V transistor A 564 RD06HVF1-101 a 1712 mosfet mitsubishi symbol marking Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DRAWING 3.6±0.2 9±0.4 4 1.2±0.4 1 For output stage of high power amplifiers in VHF band mobile radio sets.	Original	PDF	RD06HVF1 175MHz 175MHz RD06HVF1 transistor d 1557 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR Marking TRANSISTOR 737 TRANSISTOR mosfet 9V transistor A 564 RD06HVF1-101 a 1712 mosfet mitsubishi symbol marking
RD06HVF1 Abstract: 100OHM RD06HVF1-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING 1.3+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz	Original	PDF	RD06HVF1 175MHz 175MHz RD06HVF1 100OHM RD06HVF1-101
RD06HVF1 Abstract: 220uf/25V mitsubishi rf rf amplifier broad band 175mhz 220uF, 25V MITSUBISHI APPLICATION NOTE RF POWER Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-026 Date : 22th Nov. 2004 Prepared : K.Inaba Confirmed : S.Kametani SUBJECT: RD06HVF1 broad band characteristics for 135-175MHz SUMMARY: This application note shows the RF characteristics data for 135MHz-175MHz	Original	PDF	AN-VHF-026 RD06HVF1 135-175MHz 135MHz-175MHz RD06HVF1 135MHz 175MHz: 220uf/25V mitsubishi rf rf amplifier broad band 175mhz 220uF, 25V MITSUBISHI APPLICATION NOTE RF POWER
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING RD06HVF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz	Original	PDF	RD06HVF1 175MHz RD06HVF1 175MHz
RD06HVF1 Abstract: fet transistor rf RF Transistor s-parameter vhf Text: < Silicon RF Power MOS FET Discrete > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING RD06HVF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz	Original	PDF	RD06HVF1 175MHz RD06HVF1 175MHz RD06HVF1-101 Oct2011 fet transistor rf RF Transistor s-parameter vhf
RD06HVF1 Abstract: Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz	Original	PDF	RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFor Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE
RD100HHF1 Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V	Original	PDF	30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1