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    RF3826 Search Results

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    RF3826 Price and Stock

    Littelfuse Inc RF3826-000

    Gtcr38-601M-R20/ Tray |Littelfuse RF3826-000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark RF3826-000 Bulk 1,000
    • 1 -
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    • 100 -
    • 1000 $2.84
    • 10000 $2.64
    		Buy Now
    Ozdisan Elektronik RF3826-000
    • 1 $6.59307
    • 10 $6.59307
    • 100 $6.59307
    • 1000 $5.9937
    • 10000 $5.9937
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    RF3826 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF3826PCBA-410 RF Micro Devices RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF EVAL FOR RF3826 PA Original PDF
    RF3826SR RF Micro Devices RF Amplifiers, RF/IF and RFID, RF AMP 9W 2.5GHZ Original PDF

    RF3826 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 1800MHz

    Abstract: r.f. amplifier 30mhz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz r.f. amplifier 30mhz

    rf3826

    Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz

    404j

    Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) 404j transistor 1800MHz 100A0R9BT150X

    EC 401 TRANSISTOR

    Abstract: Gan hemt transistor RFMD transistor 1800MHz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) EC 401 TRANSISTOR Gan hemt transistor RFMD transistor 1800MHz

    transistor 1800MHz

    Abstract: No abstract text available
    Text: RF3826 RF3826 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density Gallium


    Original     		PDF RF3826 30MHz 2500MHz RF3826 DS130927 transistor 1800MHz

    RF3826

    Abstract: Gan transistor
    Text: RF3826 Proposed 30 – 2500 MHz, 9W GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: AlN Leadless Chip Carrier / SO8 Product Description Features ƒ Advanced GaN HEMT Technology ƒ Advanced Heat-Sink Technology The RF3826 is a wideband Power Amplifier designed for CW and


    Original     		PDF RF3826 RF3826 Gan transistor

    transistor 1800MHz

    Abstract: No abstract text available
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz

    transistor 1800MHz

    Abstract: No abstract text available
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) transistor 1800MHz

    Untitled

    Abstract: No abstract text available
    Text: TE Connectivity My Cart | My Part Lists | Sign In/Register English Change What can we help you find? Products Industries Resources About TE My Account Innovation Support Center Home > Products > Overvoltage Devices > Product Feature Selector > Product Details


    Original     		PDF RF3826Â 8x20us)

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


    Original     		PDF

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    RFHA1000

    Abstract: No abstract text available
    Text: RFMD. High-Power GaN Power ICs RFMD’s GaN Power ICs PICs are wideband power amplifiers designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios, and general


    Original     		PDF RF3826 RFHA1000 RFHA1003 RFHA1006 -40oC

    Integrated Synthesizers with Mixers

    Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
    Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services


    Original     		PDF 11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF