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    RFD3N08LSM9A Price and Stock

    Rochester Electronics LLC RFD3N08LSM9A

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD3N08LSM9A Bulk 2,425 833
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    Intersil Corporation RFD3N08LSM9A

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    Bristol Electronics RFD3N08LSM9A 3,757
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    Harris Semiconductor RFD3N08LSM9A

    3A, 80V, 0.8ohm, N-Channel, POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFD3N08LSM9A 2,425 1
    • 1 $0.3467
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    Fairchild Semiconductor Corporation RFD3N08LSM9A

    LOGIC LEVEL, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 3A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA RFD3N08LSM9A 12,598
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    RFD3N08LSM9A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD3N08LSM9A Fairchild Semiconductor 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFET Original PDF

    RFD3N08LSM9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN9321

    Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
    Text: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features • 3A, 80V The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving


    Original
    PDF RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM AN9321 AN9322 RFD3N08LSM9A TB334

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A F3N08L
    Text: RFD3N08L, RFD3N08LSM S E M I C O N D U C T O R 3A, 80V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 3A, 80V TO-251AA SOURCE DRAIN GATE • rDS ON = 0.800Ω • Temperature Compensating PSPICE Model


    Original
    PDF RFD3N08L, RFD3N08LSM O-251AA 175oC O-252AA RFD3N08L RFD3N08LSM 55e-2 58e-5) 19e-3 AN7254 AN7260 AN9321 AN9322 RFD3N08LSM9A F3N08L

    AN9322

    Abstract: AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
    Text: RFD3N08L, RFD3N08LSM Data Sheet Title FD3 8L, D3 8LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho July 1999 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors


    Original
    PDF RFD3N08L, RFD3N08LSM 175oC TB334 TA09922. RFD3N08L O-251AA O-252AA F3N08L AN9322 AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334

    AN9321

    Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334 Intersil application notes
    Text: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2836.4 • 3A, 80V • rDS ON = 0.800Ω • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve


    Original
    PDF RFD3N08L, RFD3N08LSM 175oC TB334 TA09922. RFD3N08L RFD3N08LSM AN9321 AN9322 RFD3N08LSM9A TB334 Intersil application notes

    AN9321

    Abstract: AN9322
    Text: in te r r ii RFD3N08L, RFD3N08LSM D ata S h e e t 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2 8 3 6 .4 • 3A, 80V • rDS ON = 0.800Q • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve


    OCR Scan
    PDF RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM TA09922. AN7254 AN7260. AN9321 AN9322

    Untitled

    Abstract: No abstract text available
    Text: Hormis S RFD3N08L, RFD3N08LSM Semiconductor y 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 3A, 80V • UIS Rating Curve The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors


    OCR Scan
    PDF RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM 19e-4 55e-2 58e-5) 19e-3 12e-6)

    RF03N0

    Abstract: No abstract text available
    Text: RFD3N08L, RFD3N08LSM fü HARIRIS S E M I C O N D U C T O R 3A, 80V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Packages Features • 3A, 80V • r DS ON T O -2 51A A SOURCE = 0.800ÎJ • Temperature Compensating PSPICE Model


    OCR Scan
    PDF RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM 03e-3 13e-10 1e-30 19e-4 58e-5) RF03N0