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Rochester Electronics LLC RFL1N15 N-CHANNEL POWER MOSFET
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DigiKey	RFL1N15	Bulk			182	1 - 10 - 100 - 1000 $1.65 10000 $1.65	Buy Now
Rochester Electronics LLC RFL1N15L N-CHANNEL POWER MOSFET
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DigiKey	RFL1N15L	Bulk			166	1 - 10 - 100 - 1000 $1.81 10000 $1.81	Buy Now
Harris Semiconductor RFL1N15
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Quest Components	RFL1N15		136			1 $4.7901 10 $4.7901 100 $2.9539 1000 $2.9539 10000 $2.9539	Buy Now
Rochester Electronics	RFL1N15		4,903		1	1 $1.59 10 $1.59 100 $1.49 1000 $1.35 10000 $1.35	Buy Now
RCA RFL1N15
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Quest Components	RFL1N15		8			1 $3.9918 10 $2.9273 100 $2.9273 1000 $2.9273 10000 $2.9273	Buy Now
Harris Semiconductor RFL1N15L 1A, 150V, 1.9 OHM, N-Channel POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RFL1N15L		1,421		1	1 $1.74 10 $1.74 100 $1.64 1000 $1.48 10000 $1.48	Buy Now

RFL1N15 Datasheets (10)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RFL1N15		Intersil	1A, 120V and 150V, 1.9 ?, N-Channel Power MOSFETs		Original	PDF
RFL1N15		General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V,		Scan	PDF
RFL1N15		Harris Semiconductor	Power MOSFET Data Book 1990		Scan	PDF
RFL1N15		International Rectifier	RF and BUZ Series Power MOSFETs - N-Channel		Scan	PDF
RFL1N15		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
RFL1N15		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
RFL1N15L		Intersil	1A, 120V and 150V, 1.900 ?, Logic Level, N-Channel Power MOSFETs		Original	PDF
RFL1N15L		General Electric	N-channel logic level power field-effect transistor (LL FET). 150V, 1A.		Scan	PDF
RFL1N15L		Harris Semiconductor	Power MOSFET Data Book 1990		Scan	PDF
RFL1N15L		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

RFL1N15 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AN7254 Abstract: AN7260 RFL1N12L RFL1N15L Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,	Original	PDF	O205AF) RFL1N12L, RFL1N15L RFL1N12L O-205AF AN7254 AN7260. AN7260 RFL1N12L RFL1N15L
Untitled Abstract: No abstract text available Text: RFL1N12, RFL1N15 S E M I C O N D U C T O R 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	Original	PDF	RFL1N12, RFL1N15 TA09196. TB334 095mA 75VDSS 50VDSS 25VDSS AN7254 AN7260.
RFL1N15 Abstract: AN7254 AN7260 RFL1N12 TB334 Text: RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	Original	PDF	RFL1N12, RFL1N15 TA09196. AN7254 AN7260. RFL1N15 AN7260 RFL1N12 TB334
Untitled Abstract: No abstract text available Text: y “ RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	PDF	RFL1N12, RFL1N15 TA09196. AN7254 AN7260.
5Q07 Abstract: RFP mosfets RFL1N12 RFL1N15 RFP2N12 RFP2N15 rfp1n12 ta9196 TA921 Text: Standard Power MOSFETs RFL1N12, RFL1N15, RFP2N12, RFP2N15 File N um ber 1444 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 Amperes 120 V — 150 V ro s o n : 1.75fi and 1.90 Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds	OCR Scan	PDF	RFL1N12, RFL1N15, RFP2N12, RFP2N15 RFL1N12 RFL1N15 RFP2N12 RFP2N15* AN-7254 AN-7260. 5Q07 RFP mosfets RFP2N15 rfp1n12 ta9196 TA921
2N15 Abstract: RFL1N12 RFL1N15 RFP2N12 RFP2N15 RFP-zn rfp1n12 Text: G E SOLID STATE ' DE I3Û7SGA1 GDlfllOl M T □! 0! § SOLID STATE Standard Power MOSFETs " 01E .18101 d T ' 3 ? “0 9 RFL1N12, RFL1N15, RFP2N12, RFP2N15 File Number 1444 N-Channel Enhancement-Mode	OCR Scan	PDF	d7z39 RFL1N12, RFL1N15, RFP2N12, RFP2N15 RFL1N12 RFL1N15 RFL1N15 RFP2N12 2N15 RFP2N15 RFP-zn rfp1n12
fl911 Abstract: No abstract text available Text: RFL1N12L RFL1N15L HARRIS August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package F e a tu re s TO-20SAF BOTTOM VIEW • 1 A, 1 2 0V and 150V • r DS(O N ) = 1 -9 ^ • Design O p tim ized for 5V G ate Drives GATE SOURCE • Can be Driven D irectly from Q M O S, N M O S, T T L Circuits	OCR Scan	PDF	RFL1N12L RFL1N15L O-20SAF AN-7260. fl911
Untitled Abstract: No abstract text available Text: RFL1N12, RFL1N15 HARRIS S E M I C O N D U C T O R 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	PDF	RFL1N12, RFL1N15 TA09196. AN7254 AN7260. RFL1N15
L52C Abstract: No abstract text available Text: RFL1N12 RFL1N15 2 H a rris N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package T O -2 0 5 A F • 1A, 120V and 150V • ros on) = 1.9fi GATE SOURCE • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	OCR Scan	PDF	RFL1N12 RFL1N15 RFL1N15 T1N12 92CS-34 36I3B 92CS-3 L52C
RFP2N15L Abstract: RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12 Text: Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number N-Channel Logic Level Power Field-Effect Transistors L2 FET o 1 and 2 A, 120 V and 150 V rDs(on): 1.750 and 1.90 Feature*: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits	OCR Scan	PDF	RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L 92CS-337 RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12
RFP2N12L Abstract: RFL1N12L RFL1N15L RFP2N15L rfp1n12 Text: 387SÓ81 G E S O L I D S T A T e 'd Ï » F \| 3 ö 7 S D f l l DDlfl4Sfl 3 l ~ D Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number 1513 N-Channe Logic Level Power Field-Effect Transistors L2 FET)	OCR Scan	PDF	0Dlfl42fl RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L CS-53741 RFL1N12L RFL1N15L RFP2N12L RFP2N15L rfp1n12
buz11 Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05 Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12	OCR Scan	PDF	T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: W vys S RFL1N12L, RFL 1N15L S e m ico n d ucto r 7 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 120V and 150V RFL1N12L TO -205AF RFL1N12L These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use	OCR Scan	PDF	RFL1N12L, 1N15L RFL1N12L -205AF RFL1N15IN RFL1N15L AN7254 AN7260.

field-effect transistors Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684 Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .	OCR Scan	PDF	2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684
2N6901 Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L Text: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*	OCR Scan	PDF	0G0S713 O-204 O-205 O-220 O-251 O-252 O-247 RFL2N05L RFM15N05L RFP4N05L 2N6901 2N6903 THOMSON DISTRIBUTOR RFL1N10L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
equivalent data book of 10N60 mosfet Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:	OCR Scan	PDF	1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40