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    RHRD4120 Search Results

    RHRD4120 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RHRD4120 Fairchild Semiconductor 4A, 1200V HyperFast Diode Original PDF
    RHRD4120 Fairchild Semiconductor 4A, 1200V Hyperfast Diode Original PDF
    RHRD4120 Harris Semiconductor Hyperfast Recovery Rectifier Original PDF
    RHRD4120 Harris Semiconductor 4A, 1200V Hyperfast Diodes Original PDF
    RHRD4120 Intersil 4A, 1200V Hyperfast Diodes Original PDF
    RHRD4120 Intersil 4A, 1200 V Hyperfast Diodes Scan PDF
    RHRD4120 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RHRD41209A Intersil 4A, 1200 V Hyperfast Diodes Scan PDF
    RHRD4120S Fairchild Semiconductor 4A, 1200V HyperFast Diode Original PDF
    RHRD4120S Fairchild Semiconductor 4A, 1200V Hyperfast Diode Original PDF
    RHRD4120S Harris Semiconductor Hyperfast Recovery Rectifier Original PDF
    RHRD4120S Harris Semiconductor 4A, 1200V Hyperfast Diodes Original PDF
    RHRD4120S Intersil 4A, 1200V Hyperfast Diodes Original PDF
    RHRD4120S Intersil 4A, 1200 V Hyperfast Diodes Scan PDF
    RHRD4120S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RHRD4120S96 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RHRD4120S9A Fairchild Semiconductor 4A, 1200V Hyperfast Diode Original PDF
    RHRD4120S9A Intersil Rectifier Diode, Ultra Fast Recovery Rectifier, Single, 1200V, TO-252, 2-Pin Original PDF
    RHRD4120S9A Intersil 4A, 1200 V Hyperfast Diodes Scan PDF
    RHRD4120S9AZ Intersil DIODE ULTRA FAST RECOVERY RECTIFIER 1200V 4A 2TO-252 T/R Original PDF

    RHRD4120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HR4120

    Abstract: RHRD4120 RHRD4120S RHRD4120S9A HR4120 INTERSIL
    Text: RHRD4120, RHRD4120S Data Sheet January 2000 File Number 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride


    Original     		PDF RHRD4120, RHRD4120S RHRD4120 RHRD4120S HR4120 RHRD4120S9A HR4120 INTERSIL

    HR4120

    Abstract: RHRD4120 RHRD4120S RHRD4120S9A
    Text: RHRD4120, RHRD4120S Data Sheet January 2002 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF RHRD4120, RHRD4120S RHRD4120 RHRD4120S 175oC HR4120 RHRD4120S9A

    HR4120

    Abstract: RHRD4120 RHRD4120S RHRD4120S9A
    Text: RHRD4120, RHRD4120S S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes March 1997 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <60ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C


    Original     		PDF RHRD4120, RHRD4120S O-251 O-252 RHRD4120 TA49056) 1-800-4-HARRIS HR4120 RHRD4120S RHRD4120S9A

    HR4120

    Abstract: RHRD4120 RHRD4120S RHRD4120S9A
    Text: RHRD4120, RHRD4120S S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <60ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C


    Original     		PDF RHRD4120, RHRD4120S O-251 O-252 RHRD4120 TA49056) HR4120 RHRD4120S RHRD4120S9A

    hr 4120

    Abstract: HR4120 hr 4120 diode RHRD4120 RHRD4120S RHRD4120S9A
    Text: RHRD4120, RHRD4120S Data Sheet File Number 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride


    Original     		PDF RHRD4120, RHRD4120S RHRD4120 RHRD4120S hr 4120 HR4120 hr 4120 diode RHRD4120S9A

    1n120cn

    Abstract: GEM X 365 1N120C TB334 HGTD1N120CNS HGTD1N120CNS9A HGTP1N120CN TA49317
    Text: HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and


    Original     		PDF HGTD1N120CNS, HGTP1N120CN HGTP1N120CN 1n120cn GEM X 365 1N120C TB334 HGTD1N120CNS HGTD1N120CNS9A TA49317

    G5N120CN

    Abstract: TB334 HGT1S5N120CNS HGT1S5N120CNS9A HGTP5N120CN LD26 RHRD4120 G5N120
    Text: HGTP5N120CN, HGT1S5N120CNS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTP5N120CN, HGT1S5N120CNS HGTP5N120CN HGT1S5N120CNS G5N120CN TB334 HGT1S5N120CNS9A LD26 RHRD4120 G5N120

    Untitled

    Abstract: No abstract text available
    Text: HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTD1N120BNS, HGTP1N120BN HGTD1N120BNS HGTP1N120BN

    1n120cnd

    Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334 1N120CN
    Text: HGTP1N120CND, HGT1S1N120CNDS Data Sheet December 2001 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    Original     		PDF HGTP1N120CND, HGT1S1N120CNDS HGTP1N120CND HGT1S1N120CNDS TA49317. RHRD4120 TA49056) 1n120cnd HGT1S1N120CNDS9A RHRD4120 TB334 1N120CN

    HGT1S2N120CNDS

    Abstract: HGTP2N120CND HGT1S2N120CNDS9A RHRD4120 TB334 2N120CN
    Text: HGTP2N120CND, HGT1S2N120CNDS Data Sheet December 2001 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    Original     		PDF HGTP2N120CND, HGT1S2N120CNDS HGTP2N120CND HGT1S2N120CNDS TA49313. TA49056 RHRD4120) HGT1S2N120CNDS9A RHRD4120 TB334 2N120CN

    BYW19-1000

    Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
    Text: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820


    Original     		PDF FO-012 1-800-4-HARRIS BYW19-1000 BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200

    RHRG3040

    Abstract: RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040
    Text: 8A RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090


    Original     		PDF RHRD6120 RHRD6120S RHRP8120 RHRP15120 RHRP15100 RHRP1590 RHRP1580 RHRP1570 RHRP1560 RHRP1550 RHRG3040 RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040

    MOSFET 1200v 3a

    Abstract: HGTD1N120BNS HGTD1N120BNS9A HGTP1N120BN RHRD4120 TB334 1N120BN 1N120B
    Text: HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTD1N120BNS, HGTP1N120BN HGTD1N120BNS HGTP1N120BN MOSFET 1200v 3a HGTD1N120BNS9A RHRD4120 TB334 1N120BN 1N120B

    1N120CND

    Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334
    Text: HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    Original     		PDF HGTP1N120CND, HGT1S1N120CNDS HGTP1N120CND HGT1S1N120CNDS TA49317. RHRD4120 TA49056) 1N120CND HGT1S1N120CNDS9A RHRD4120 TB334

    hr 4120

    Abstract: 4-120S 4120S
    Text: RHRD4120, RHRD4120S H A R R IS S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes April 1 9 9 5 Package Features JE D E C S T Y LE TO-251 • Hyperfast with Soft R ecovery.<60ns • Operating T em p eratu


    OCR Scan     		PDF RHRD4120, RHRD4120S O-251 RHRD4120 TA49056) hr 4120 4-120S 4120S

    Untitled

    Abstract: No abstract text available
    Text: RHRD4120, RHRD4120S S em iconductor March 1997 File Number 3626.3 4A, 1200V Hyperfast Diodes Features RHRD4120 and RHRD4120S TA49056 are hyperfast diodes with soft recovery characteristics (tp p < 60ns). They have half the recovery time of ultrafast diodes and are silicon


    OCR Scan     		PDF RHRD4120, RHRD4120S RHRD4120 TA49056) and-------------400

    hr4120

    Abstract: Hyperfast Diode 1200V RHRD4120 RHRD4120S RHRD4120S9A 1475C
    Text: interrii RHRD4120, RHRD4120S J a n u a ry . Data Sheet m i File Num ber 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride


    OCR Scan     		PDF RHRD4120, RHRD4120S RHRD4120 RHRD4120S TA49056. 00A/jls hr4120 Hyperfast Diode 1200V RHRD4120S9A 1475C

    Untitled

    Abstract: No abstract text available
    Text: HGTP1N120BND, HGT1S1N120BNDS S e m iconductor D ata S h eet F eb ru ary 1999 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    OCR Scan     		PDF HGTP1N120BND, HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS TA49316. RHRD4120 TA49056) O-220AB

    EM- 546 motor

    Abstract: No abstract text available
    Text: HGTD1N120BNS, HGTP1N120BN Data Sheet February 1999 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    OCR Scan     		PDF HGTD1N120BNS, HGTP1N120BN HGTD1N120BNS HGTP1N120BN O-252AA T0-252AA EM- 546 motor

    1N120CND

    Abstract: No abstract text available
    Text: L I* n n i C y a £ £ & HGTP1N120CND, HGT1S1N120CNDS 6.2A, 1200V, NPT Series N-Channel IGBT Wjth Anti-Parallel Hyperfast Diode ADVANCE INFORMATION November 1998 Features Description • 6.2A, 1200V, T C = 2 5 °C The HGTP1N120CND and the HGT1S1N120CNDS are NonPunch Through NPT IGBT designs. They are new members of


    OCR Scan     		PDF HGTP1N120CND, HGT1S1N120CNDS TB334, HGTP1N120CND HGT1S1N120CNDS 1-800-4-HARRIS 1N120CND

    Untitled

    Abstract: No abstract text available
    Text: HGTP2N120CND, HGT1S2N120CNDS Semiconductor D ata S h eet M arch 1999 13A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    OCR Scan     		PDF HGTP2N120CND, HGT1S2N120CNDS HGTP2N120CND HGT1S2N120CNDS TA49313. TA49056 RHRD4120) O-263AB

    Untitled

    Abstract: No abstract text available
    Text: HGTP1N120CND, HGT1S1N120CNDS Semiconductor February 1999 Data Sheet 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    OCR Scan     		PDF HGTP1N120CND, HGT1S1N120CNDS HGTP1N120CND HGT1S1N120CNDS TA49317. RHRD4120 TA49056) O-263AB

    100ns

    Abstract: RHRP15120 hru150 rhrp30120
    Text: HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE TO-252 TO-251 TO-220AC 'F AVG 'F(A V G ) 6A 4A SA 8A 15A 30A 30A 50A 'F (A V G ) 75A 50A 75A 100 A 150A RHRD440 RHRD640 2.1V 35ns 2.1V 35ns RHRD440S 2.1V 35ns RHRD640S RHRP840 2.1V 35ns 2.1V 35ns RHRP1540


    OCR Scan     		PDF O-251 O-252 O-220AC O-247 O-218 RHRD440S RHRD450S RHRD460S RHRG3040 RHRG3050 100ns RHRP15120 hru150 rhrp30120

    TO-263

    Abstract: TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS
    Text: INSULATED GATE BIPOLAR T R A N S I S T O R S The U FS SE R IE S of IGBTs Insulated specified in surface-mounted packages variety of applications requiring high Gate Bipolar Transistors is available in ranging from TO-252AA to TO-263AB. power control. 600V and 1200V ratings and may be


    OCR Scan     		PDF O-252AA O-263AB. O-263 O-252 TO-263 TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS