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    RJU6052SDPE-00#J3 Renesas Electronics Corporation Fast Recovery Diodes, LDPAK(S)-(1), /Tube Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RJU6052SDPE-00-J3

    DIODE GEN PURP 600V 20A LDPAK
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    RJU6052SDPE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJU6052SDPE-00#J3 Renesas Electronics America Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 600V 20A LDPAK Original PDF

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    RJU6052SDPE

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU6052SDPE Single Diode Ultra Fast Recovery Diode R07DS0380EJ0100 Rev.1.00 Apr 26, 2011 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 10 A, di/dt = −100 A/ s • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A)


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    PDF RJU6052SDPE R07DS0380EJ0100 PRSS0004AE-B RJU6052SDPE

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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU6052SDPE Single Diode Ultra Fast Recovery Diode R07DS0380EJ0100 Rev.1.00 Apr 26, 2011 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 10 A, di/dt = −100 A/ s • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A)


    Original
    PDF RJU6052SDPE R07DS0380EJ0100 PRSS0004AE-B

    SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

    Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
    Text: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output


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    PDF RJS6005TDPP; 0212/100/in-house/LAH/JE SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0