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    RN2731B110W Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN2731B110W Philips Semiconductors NPN silicon planar epitaxial microwave power transistor Scan PDF

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    T17 TRANSISTOR

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN Silicon planar epitaxial microwave power transistor RN2731B110W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 is pulse width, 10% duty factor Microwave performance up to Tmb = 25 °C in a common base class C


    OCR Scan     		PDF RN2731B110W 100ns; 7110fl2b T17 TRANSISTOR

    T17 TRANSISTOR

    Abstract: RN2731B110W
    Text: Philips Semiconductors Objective specification NPN Silicon planar epitaxial RN2731B110W microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 is pulse width, 10% duty factor • Diffused emitter ballasting resistors


    OCR Scan     		PDF RN2731B110W 10Ojxs; 7110flPb T17 TRANSISTOR RN2731B110W