RN6001
Abstract: RN5001
Text: RN6001 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN6001 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN6001
RN5001
SC-62
-10mA
RN6001
RN5001
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PDF
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RN5001
Abstract: RN6001
Text: RN6001 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN6001 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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RN6001
RN5001
SC-62
RN5001
RN6001
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PDF
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RN6001
Abstract: No abstract text available
Text: RN6001 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN6001 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process
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Original
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RN6001
RN5001
SC-62
RN6001
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PDF
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RN5001
Abstract: RN6001
Text: RN5001 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN5001 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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RN5001
RN6001
SC-62
961001EAA2'
RN5001
RN6001
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PDF
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NPCE781BA0DX
Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM
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512MB
64Mx16b
C995R
GPIO45
650ms
NPCE781BA0DX
nuvoton NPCE781BA0DX
92HD79B1a5
92HD79B1
NPCE781
TPS51611
NPCE781B
UP7534BRA8
npce781ba
G7922R61U
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PDF
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RN5001
Abstract: RN6001
Text: RN5001 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN5001 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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RN5001
RN6001
SC-62
RN5001
RN6001
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PDF
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN6001 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS R N fi n n 1 U nit in mm M O TO R DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 4 .6 M A X . POWER SW ITCHING APPLICATIONS. 1.7 M A X . W ith Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN6001
RN5001
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICO N P N P EPITAXIAL T Y P E RN6001 M O T O R DRIVE CIRCUIT APPLICATIONS. U n it in mm PO W ER AM PLIFIER APPLICATIONS. l f6M AX. PO W ER SW ITCH IN G APPLICATIONS. 1.7 MAX. 0 . 4 ± 0 .0 5 . W ith B uilt-in Bias Resistors Simplify C ircuit Design Reduce a Q uantity of P a rts and M anufacturing Process
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OCR Scan
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RN6001
RN5001
--30V,
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PDF
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2-5K1A toshiba
Abstract: No abstract text available
Text: RN6001 RN6001 MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process Small Flat Package P q = 1~2W (Mounted on Ceramic substrate)
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OCR Scan
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RN6001
RN6001)
RN5001
SC-62
--30V,
2-5K1A toshiba
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN6001 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN6001 Unit in mm M O TO R DRIVE CIRCUIT APPLICATIONS. 4.6MAX. 1.7 MAX. POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN6001
RN5001
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PDF
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Untitled
Abstract: No abstract text available
Text: RN5001 RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. P O W ER SW IT C H IN G APPLICATIONS. J53= 1.7MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process
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OCR Scan
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RN5001
RN5001)
RN6001
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PDF
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2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4401
2N4402
2N3904 331 transistor
C549 transistor
2SK1227
transistor 1201 1203 1205
transistor C549
transistor Hand book
2N5551 2SC1815 2SK246
2n4401 331
02CZ27
transistor 737
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PDF
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Marking XA XB XC XD XE XF XH XI XJ XK XM
Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Text: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107
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RN1101
RN1102
RN1103
RN1104
RN1105
RN1106
RN1107
RN1108
RN1109
RN1110
Marking XA XB XC XD XE XF XH XI XJ XK XM
marking YJ transistors
YK NPN
RN2608 - RN2908
QF npn
Marking 47
marking YB
YB MARKING
ic marking YK
kn marking
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RN2226
Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Text: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package
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2SC1815
2SC1815
2SA1015
OT-23MOD.
/RN1501
VRN2501/
RN1502
RN2502
RN1503
RN2226
2sa1015 sot-23
rn4601
diode 2sa1015
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PDF
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RN1417
Abstract: rn4601
Text: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404
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RN1001
RN1002
RN1003
RN1004
RN1005
RN1006
RN1007
RN1008
RN1009
RN1010
RN1417
rn4601
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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PDF
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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PDF
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Untitled
Abstract: No abstract text available
Text: RN5001 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN5001 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 4.6MAX. 1.7 MAX. POWER SWITCHING APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN5001
RN6001
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PDF
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2-5K1A toshiba
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. 1.6 MAX0-4±0.05 PO W ER SW ITCHIN G APPLICATIONS. • W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process
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OCR Scan
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RN5001
RN6001
2-5K1A toshiba
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PDF
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high frequency diode
Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Text: 1. Using Device Selection Flowchart 1. Using Device Selection Flowchart 17 1. Using Device Selection Flowchart 1.1 General Purpose Low Frequency Transistor Selection Method Start I S ig n a l Frequency H igh Frequency ~ G H Z Low Frequency (D C ~ S e v e ra l M HZ)
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OCR Scan
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RN1421
RN2421
100Vjy±
2SC2873
2SA1213
2D01F
HN2D01FU
1SS308
HN1D01F
1D02F
high frequency diode
15536-1
1SS1
"high frequency diode"
2SC4116
A1873
flowchart
2sc3072
TC7S
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PDF
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RT1N137P
Abstract: RT1N140C RT1P137P RT1P141C RN2503 RN2504 RN2505 RN2506 RN2507 RN2508
Text: - 332 - MAËtë m £ tt « m & VCBO V RN2501 SW/INV/D (V) -50 -0.1 0.3 0.3 -50 -0.1 0.3 -0.1 -50 -50 -0.1 0.3 -0.1 -50 -50 -0.1 0.3 -0.1 -50 -50 -50 -0.1 0.3 -0.1 SW/INV/D -50 -50 -0.1 0.3 SW/INV/D -50 “50 -0. 1 0.3 -50 RN2504 SW/INV/D -50 RN2505 SW/INV/D
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OCR Scan
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RNZ501
RS/2502
RN2503
RN2504
RN2505
RN2506
SC-62
BN5002
RN5003
RT1N137P
RT1N140C
RT1P137P
RT1P141C
RN2503
RN2504
RN2505
RN2506
RN2507
RN2508
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PDF
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2sc 1203
Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
Text: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240
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OCR Scan
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1815L
2SC2240
2SC1627
2SC752G
SC-70)
SC-59)
2SC2713
2SC4210
2SA1621
2SC4209
2sc 1203
2Sc1923 equivalent
2SK241 equivalent
2sa 1300 equivalent
2SC 1902
2sc2240 equivalent
2sc1815 equivalent
2SC 1207
N1408
2SC1815 NPN SOT-23
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PDF
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ERI - 35 - 2 YE 0515
Abstract: transistor 2SC2458 diode marking YF RN1241A TRANSISTOR MARKING YB MQ SC-62 2SA1314 2SC3326
Text: [ 1 ] Quick Selector by Type [2 ] Quick Selector Guide OI 1. Quick Selector by Type [2 ] Quick Selector Guide 1. Quick Selector by Type [2 ] Quick Selector Guide E E E E 1. Quick Selector by Type Equivalent Circuit [2 ] 2. Package Types 18 Quick Selector Guide
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OCR Scan
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80MIN.
120-4O
22kil
RN1001
47kfi
RN1001
RN2001
RN1002
RN2002
ERI - 35 - 2 YE 0515
transistor 2SC2458
diode marking YF
RN1241A
TRANSISTOR MARKING YB
MQ SC-62
2SA1314
2SC3326
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PDF
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