FOR1B
Abstract: No abstract text available
Text: EM47CM1688SBB1 1 Revision1History1 1 Revision10.11 Jun.12012 1 -First1release.1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Jun.120121 1/381 www.eorex.com1 1 EM47CM1688SBB1 1 1Gb1(8Mx8Bank×16)1Double1DATA1RATE131SDRAM1
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EM47CM1688SBB1
Revision10
1Double1DATA1RATE131SDRAM1
CL-11
1CL-21
141with1Burst1Chop1
1and18
196Ball-FBGA1
FOR1B
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Untitled
Abstract: No abstract text available
Text: EM47DM1688SBB1 1 Revision1History1 1 Revision10.11 Jun.12012 1 -First1release.1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Jun.120121 1/381 www.eorex.com1 1 EM47DM1688SBB1 1 2Gb1(16Mx8Bank×16)1Double1DATA1RATE131SDRAM1
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EM47DM1688SBB1
Revision10
1Double1DATA1RATE131SDRAM1
141with1Burst1Chop1
1and18
MR31bit1A21
196Ball-FBGA1
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FOR1B
Abstract: AC1501
Text: EM47DM1688SBC1 1 Revision1History1 1 Revision10.11 Jan.12013 1 -First1release.1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Jan.120131 1/381 www.eorex.com1 1 EM47DM1688SBC1 1 2Gb1(16Mx8Bank×16)1Double1DATA1RATE131SDRAM1
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EM47DM1688SBC1
Revision10
1Double1DATA1RATE131SDRAM1
141with1Burst1Chop1
1and18
MR31bit1A21
196Ball-FBGA1
FOR1B
AC1501
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Abstract: No abstract text available
Text: ICS525-01/02 OSCaR User Configurable Clock Description Features The ICS525-01 and ICS525-02 OSCaR™ are the most flexible way to generate a high quality, high accuracy, high frequency clock output from an inexpensive crystal or clock input. The name OSCaR stands for OSCillator Replacement, as
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ICS525-01/02
ICS525-01
ICS525-02
Revision10209
295-9800tel·
MDS525G
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Abstract: No abstract text available
Text: FBT COUPLER Dual Window Wideband Coupler - Mini Size Specifications: Parameter Premium operating Wavelength Parameter Insertion Loss Max. operating Wavelength Parameter Uniformity (typical) Insertion Loss (Max.) Returnoperating Loss Wavelength Uniformity (typical)
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900um
or55dB,
LT1111
LT111103
LT11110
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Untitled
Abstract: No abstract text available
Text: MTT Series – 5 x 3.2 Ceramic SMD VCTCXO ¾ Low Profile SMD Device ¾ Hermetically Sealed ¾ Tight Stability Over Temperature ¾ Low Power Consumption ¾ Excellent Phase Noise ELECTRICAL SPECIFICATIONS: Frequency Frequency Stability vs Temperature, Load and Voltage
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000MHZ
MIL-STD-883,
Revision10/18/05
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Abstract: No abstract text available
Text: November 1996 Revision 1.0 FUJITSU DATA SHEET - EDC4B V724 2/4 -(60/70)(J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3V (ECC), Buffered General Description The EDC4BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module
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32MByte
EDC4BV724
32-megabyte
168-pins,
MB81V1
74ABT16244
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Untitled
Abstract: No abstract text available
Text: llT S U May 1997 Revision 1.0 ^ SDC16U V6484- 67/84/100/125 T-S 128MByte (16M X 64) CMOS Synchronous DRAM Module General Description The SDC 16UV6484-(67/84/100/125)T-S is a high performance, 128-megabtye synchronous, dynam ic RAM module organized as 16M words by 64 b is, in a 168-pin, dual-in-line m em ory module (DIMM) package.
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SDC16U
V6484-
128MByte
16UV6484-
128-megabtye
168-pin,
B81164842A-
64-X64,
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Untitled
Abstract: No abstract text available
Text: <P July 1996 Revision 1.0 FUJI DATA SH EET - “ SDC4UV6482- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6482-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as
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SDC4UV6482-
32MByte
32-megabtye
168-pin,
B81117822A-
200mV.
37iH75b
V6482-
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Untitled
Abstract: No abstract text available
Text: FUJITSU May 1997 Revision 1.0 data sheet SDC8UV6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8U V6484-(67/84/100/125)T-S is a hgh performance, 64-megabtye synchronous, dynarrc RAM module organeed as 8M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC8UV6484-
64MByte
V6484-
64-megabtye
168-pin,
MB81164842A-
67/84/l
64MByte
125MHz)
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