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    Mersen Electrical Power S101280CF00

    A070URB700SPQ
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    Isostatic Industries Inc SS-1012-8 (SS101208)

    Sleeve Bearing, SS-1012-8 .3145 X .378 X 1/2in, Powdered Metal Bronze | Isostatic SS-1012-8
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    Ferraz Shawmut S101280CF00

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    Kostal GmbH & Co KG 10128872

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    S10128 Datasheets (1)

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    S10128 Hamamatsu CCD area image sensor Front-illuminated FFT-CCDs for X-ray imaging Original PDF

    S10128 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S8986, S10128 Front-illuminated FFT-CCDs for X-ray imaging S8986 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8986 has about 2 mega 1700 x 1200 pixels each of which is 20 × 20 µm. S8986 delivers low dark current when operated in MPP (Multi Pinned-Phase) mode.


    Original     		S8986, S10128 S8986 S10128 S10127 PDF

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S8986, S10128 Front-illuminated FFT-CCDs for X-ray imaging S8986 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8986 has about 2 mega 1700 x 1200 pixels each of which is 20 × 20 µm. S8986 delivers low dark current when operated in MPP (Multi Pinned-Phase) mode.


    Original     		S8986, S10128 S8986 S10128 S10127 PDF

    dental sensor

    Abstract: x-ray S10127 S10128 S1700 S1701 S1702 S1703 S8985-02 S8986
    Text: IMAGE SENSOR CCD area image sensor S8986, S10128 Front-illuminated FFT-CCDs for X-ray imaging S8986 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8986 has about 2 mega 1700 x 1200 pixels each of which is 20 × 20 µm. S8986 delivers low dark current when operated in MPP (Multi Pinned-Phase) mode.


    Original     		S8986, S10128 S8986 S10128 S10127 dental sensor x-ray S10127 S1700 S1701 S1702 S1703 S8985-02 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4276DY 2002/95/EC Si4276DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    sc 1287

    Abstract: No abstract text available
    Text: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1422DH 2002/95/EC OT-363 SC-70 Si1422DH-T1-GE3 11-Mar-11 sc 1287 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4004DY 2002/95/EC Si4004DY-T1-GE3 11-Mar-11 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4276DY 2002/95/EC Si4276DY-T1-GE3 18-Jul-08 PDF

    p7 marking

    Abstract: SI2319CDS
    Text: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2319CDS 2002/95/EC O-236 OT-23) Si2319CDS-T1-GE3 18-Jul-08 p7 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS456DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0068 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS456DN 2002/95/EC SiS456DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4276DY 2002/95/EC Si4276DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4004DY 2002/95/EC Si4004DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2319CDS 2002/95/EC O-236 OT-23) Si2319CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4004DY 2002/95/EC Si4004DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS456DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0068 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS456DN 2002/95/EC SiS456DN-T1-GE3 11-Mar-11 PDF

    Si2319CDS

    Abstract: SI2319CDS-T1GE3 S10 SOT23 MARKING
    Text: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2319CDS 2002/95/EC O-236 OT-23) Si2319CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SI2319CDS-T1GE3 S10 SOT23 MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1422DH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4276DY 2002/95/EC Si4276DY-T1-GE3 11-Mar-11 PDF

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4276DY 2002/95/EC Si4276DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sis456

    Abstract: No abstract text available
    Text: SiS456DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0068 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS456DN 2002/95/EC SiS456DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sis456 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS456DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0068 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS456DN 2002/95/EC SiS456DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS456DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0068 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS456DN 2002/95/EC SiS456DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si4004

    Abstract: No abstract text available
    Text: New Product Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0138 at VGS = 10 V 12 0.0192 at VGS = 4.5 V 12 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4004DY 2002/95/EC Si4004DY-T1-GE3 18-Jul-08 si4004 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2319CDS 2002/95/EC O-236 OT-23) Si2319CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1422DH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF