electron Detector
Abstract: S11142 United Detector silicon photodiode electron electron gun SE-171
Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron
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S11141
S11142
S11141:
S11142:
SE-171
KSPD1080E01
electron Detector
S11142
United Detector silicon photodiode
electron
electron gun
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Untitled
Abstract: No abstract text available
Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron
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S11141
S11142
S11141:
S11142:
SE-171
KSPD1080E01
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Untitled
Abstract: No abstract text available
Text: 電子線検出用 Siフォトダイオード S11141-10 S11142-10 低エネルギー 1 keV以上 の電子線を高感度に 直接検出 特長 用途 低エネルギー (1 keV以上)の電子線を高感度に直接検出 走査電子顕微鏡 (SEM)の反射電子検出器
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S11141-10
S11142-10
S11141-10:
S11142-10:
KSPDA0188JA
S11141-10,
KSPD1083J01
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Untitled
Abstract: No abstract text available
Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron
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S11141
S11142
S11141:
S11142:
SE-171
KSPD1080E01
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S11141
Abstract: S11142
Text: 電子線検出用 Siフォトダイオード S11141 S11142 低エネルギー 2 keV以上 の電子線を高感度に 直接検出 特長 用途 低エネルギー (2 keV以上)の電子線を高感度に直接検出 走査電子顕微鏡 (SEM)の反射電子検出器
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S11141
S11142
S11141:
S11142:
S11142
S11141
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dg468dv
Abstract: No abstract text available
Text: DG467, DG468 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG467 and DG468 are dual supply single-pole/singlethrow SPST switches. On resistance is 10 maximum and flatness is 2 max over the specified analog signal range.
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DG467,
DG468
DG467
DG468
DG467/468
2011/65/EU
2002/95/EC.
2002/95/EC
dg468dv
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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Untitled
Abstract: No abstract text available
Text: DG604 Vishay Siliconix 1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer FEATURES DESCRIPTION • Halogen-free according to IEC 61249-2-21 Definition • Ultra low charge injection ± 1 pC, typ. over the full analog signal range • Leakage current < 0.5 nA max. at 85 °C
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DG604
DG604EQ-T1-E3)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: DG540, DG541, DG542 Vishay Siliconix Wideband/Video “T” Switches DESCRIPTION FEATURES The DG540, DG541, DG542 are high performance monolithic wideband/video switches designed for switching RF, video and digital signals. By utilizing a "T" switch configuration on each channel, these devices achieve
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DG540,
DG541,
DG542
DG542
DG540
2011/65/EU
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: DG540, DG541, DG542 Vishay Siliconix Wideband/Video “T” Switches DESCRIPTION FEATURES The DG540, DG541, DG542 are high performance monolithic wideband/video switches designed for switching RF, video and digital signals. By utilizing a "T" switch configuration on each channel, these devices achieve
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DG540,
DG541,
DG542
DG542
DG540
2002/95/EC.
2002/95/EC
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S8558
Abstract: No abstract text available
Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ
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DG9421
Abstract: No abstract text available
Text: DG9421, DG9422 Vishay Siliconix Precision Low-Voltage, Low-Glitch CMOS Analog Switches DESCRIPTION FEATURES Using BiCMOS wafer fabrication technology allows the DG9421, DG9422 to operate on single and dual supplies. Designed for optimal performance at single 5 V and dual
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DG9421,
DG9422
DG9422
DG9421
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: DG9421, DG9422 Vishay Siliconix Precision Low-Voltage, Low-Glitch CMOS Analog Switches DESCRIPTION FEATURES Using BiCMOS wafer fabrication technology allows the DG9421, DG9422 to operate on single and dual supplies. Designed for optimal performance at single 5 V and dual
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DG9421,
DG9422
DG9422
DG9421
2011/65/EU
2002/95/EC.
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DG604
Abstract: No abstract text available
Text: DG604 Vishay Siliconix 1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer FEATURES DESCRIPTION • Halogen-free according to IEC 61249-2-21 Definition • Ultra low charge injection ± 1 pC, typ. over the full analog signal range • Leakage current < 0.5 nA max. at 85 °C
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DG604
DG604
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: DG540, DG541, DG542 Vishay Siliconix Wideband/Video “T” Switches DESCRIPTION FEATURES The DG540, DG541, DG542 are high performance monolithic wideband/video switches designed for switching RF, video and digital signals. By utilizing a "T" switch configuration on each channel, these devices achieve
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DG540,
DG541,
DG542
DG542
DG540
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: DG9421, DG9422 Vishay Siliconix Precision Low-Voltage, Low-Glitch CMOS Analog Switches DESCRIPTION FEATURES Using BiCMOS wafer fabrication technology allows the DG9421, DG9422 to operate on single and dual supplies. Designed for optimal performance at single 5 V and dual
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DG9421,
DG9422
DG9422
DG9421
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: DG9421, DG9422 Vishay Siliconix Precision Low-Voltage, Low-Glitch CMOS Analog Switches DESCRIPTION FEATURES Using BiCMOS wafer fabrication technology allows the DG9421, DG9422 to operate on single and dual supplies. Designed for optimal performance at single 5 V and dual
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DG9421,
DG9422
DG9422
DG9421
2011/65/EU
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: DG604 Vishay Siliconix 1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer FEATURES • Halogen-free according to IEC 61249-2-21 Definition • Ultra low charge injection ± 1 pC, typ. over the full analog signal range • Leakage current < 0.5 nA max. at 85 °C
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DG604
DG604EQ-T1-E3)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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DG540DN-E3
Abstract: dg540dj-e3
Text: DG540, DG541, DG542 Vishay Siliconix Wideband/Video “T” Switches DESCRIPTION FEATURES The DG540, DG541, DG542 are high performance monolithic wideband/video switches designed for switching RF, video and digital signals. By utilizing a "T" switch configuration on each channel, these devices achieve
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DG540,
DG541,
DG542
DG542
DG540
2011/65/EU
2002/95/EC.
DG540DN-E3
dg540dj-e3
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Untitled
Abstract: No abstract text available
Text: DG604 Vishay Siliconix 1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer FEATURES DESCRIPTION • Halogen-free according to IEC 61249-2-21 Definition • Ultra low charge injection ± 1 pC, typ. over the full analog signal range • Leakage current < 0.5 nA max. at 85 °C
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DG604
DG604
11-Mar-11
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