TME 57
Abstract: No abstract text available
Text: ^ E D I EDI8F16512C S12Kx16 SRAM Module ElECTUONC Œ SG N S N C .i 512KX16 Static RAM CMOS, Module Features 512Kx16bitCMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F16512LP • TTL Compatible Inputs and Outputs
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EDI8F16512C
S12Kx16
512Kx16bitCMOS
100ns
EDI8F16512LP)
512KX16
8192K
128Kx8
TME 57
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Untitled
Abstract: No abstract text available
Text: «ffí 1 £ 1993 □PM D P S 5 1 2 X 1 6 n 3 Dense-Pac Microsystems, Inc. Ceramic, S12Kx16 SRAM Stack Modules O D E S C R IP T IO N : The D PS512X16n3 SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight
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S12Kx16
PS512X16n3
50-pin
100ns
120ns
150ns
125-C
30A097-08
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EDI8F16512
Abstract: No abstract text available
Text: WDl EDI8F16512Ç 512KX16 SRAM Module ELECTRONIC. LÉSIGNS, INC.i 512KxWStatic RAM CMOS, Module iF eatures The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16bitCM0S Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory
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EDI8F16512Ç
512KX16
512KxWStatic
EDI8F16512C
8192K
128Kx8
EDI8F16512LP)
512Kx16bitCM0S
10Ghs
EDI8F16512
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Untitled
Abstract: No abstract text available
Text: intei 28F800BV/CE 8-Mbit 512Kx16,1024Kx8 SmartVoltage Boot Block Flash Memory Family S m artDie P roduct Specification m Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation — Program Time Reduced 60% at 12 V
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28F800BV/CE
512Kx16
1024Kx8)
x8/x16-Selectable
28F800
32-bit
16-Kbyte
X28F800BV-T70
X28F800BV-B70
X28F800CE-T120
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Untitled
Abstract: No abstract text available
Text: PRELIM INARY p i l C R Q ’ i! r\ v. '’ t- f M !. I i ü ü ? \ FLASH MEMORY h L. A b i ' 1 ’ IYIBG x rf i„IE i\,1 0 h V MT28F800B1 FEATURES • Eleven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Eight main memory blocks
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16KB/8K-word
100ns
110ns,
150ns
MT28F800B1
16-bit
GT997,
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Untitled
Abstract: No abstract text available
Text: m x EDI8C16512CA m ELECTRONIC DESIGN N C 512Kx16 Static Ram PRELIMINARY 512Kx16 CMOS, High Speed Static RAM Features The EDI8C16512CA, a high speed, high performance, 8 512Kx16 bit CMOS Static megabit density Static RAM organized as 512Kx16 bits, contains two 512Kx8 SRAMs.
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EDI8C16512CA
512Kx16
EDI8C16512CA,
512Kx8
EDI8C16512LPA55JM
EDI8C16512CA20JM
EDI8C16512CA20JI
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