7382
Abstract: CPH5820 D2503 MCH3308 SBS006M
Text: Ordering number : ENN7382 CPH5820 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5820 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2171
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ENN7382
CPH5820
MCH3308)
SBS006M)
CPH5820]
7382
CPH5820
D2503
MCH3308
SBS006M
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SBS006M
Abstract: No abstract text available
Text: Ordering number : ENN7669 SBS006M Schottky Barrier Diode SBS006M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1305A Features 2 1 0.65 0.07 Low forward voltage IF=0.3A, VF max=0.4V (IF=0.5A, VF max=0.47V). Ultrasmall package permitting applied sets to be
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ENN7669
SBS006M
SBS006M]
SBS006M
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171
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ENN6980
CPH5804
MCH3312)
SBS006M)
CPH5804]
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TA-3176
Abstract: marking QB MCH3308 MCH5802 SBS006M
Text: Ordering number : ENN6961 MCH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2195
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ENN6961
MCH5802
MCH3308)
SBS006M)
MCH5802]
TA-3176
marking QB
MCH3308
MCH5802
SBS006M
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SBS006
Abstract: No abstract text available
Text: 注文コード No. N 6 9 2 9 A SBS006 No. N 6 9 2 9 A 62901 新 半導体ニューズ No.6929 とさしかえてください。 SBS006 ショットキバリアダイオード 30V, 0.5A 整流素子 用途 ・スイッチングレギュレータ・コンバータ・チョッパ等の高周波回路整流用。
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SBS006
100mA,
100mA
IT00633
IT00634
IT00632
IT00635
IT00636
SBS006
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ic 74541 information
Abstract: ic 74541 ENN7454 MCH5819 MARKING QV MCH3408 SBS006M
Text: Ordering number : ENN7454 MCH5819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5819 DC / DC Converter Applications Features Package Dimensions Composite type with a N-Channel Sillicon MOSFET unit : mm MCH3408 and a Schottky Barrier Diode (SBS006M) 2195
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ENN7454
MCH5819
MCH3408)
SBS006M)
MCH5819]
ic 74541 information
ic 74541
ENN7454
MCH5819
MARKING QV
MCH3408
SBS006M
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SBS006
Abstract: No abstract text available
Text: Ordering number : ENN6929A SBS006 Shottky Barrier Diode SBS006 30V, 0.5A Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters and choppers . unit : mm 1197A 0.3 0.15 3 0.425 • Low forward voltage (IF=0.3A, VF max=0.4V)
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ENN6929A
SBS006
SBS006applied
SBS006]
SBS006
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mch3412
Abstract: ta3173 DIODE MARKING 3173 TA-317
Text: Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006)
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ENN6981
CPH5805
MCH3412)
SBS006)
CPH5805]
mch3412
ta3173
DIODE MARKING 3173
TA-317
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6929A SBS006 Shottky Barrier Diode SBS006 30V, 0.5A Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters and choppers . unit : mm 1197A 0.3 0.15 3 0.425 • Low forward voltage (IF=0.3A, VF max=0.4V)
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ENN6929A
SBS006
SBS006]
SBS006applied
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MCH3408
Abstract: MCH5803 SBS006M
Text: Ordering number : ENN6958 MCH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3408 and a Schottky Barrier Diode (SBS006M) 2195
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ENN6958
MCH5803
MCH3408)
SBS006M)
MCH5803]
MCH3408
MCH5803
SBS006M
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SBS006M
Abstract: No abstract text available
Text: SBS006M SPICE PARAMETER DIODE model : DIODE Parameter Value IS 8.80E-06 BV 40.0 ISR 8.00E-06 VJ 0.48 TT 2.00E-09 TRS 2.60E-03 Temp = 27 deg Date : 2003/10/7 Parameter N IBV NR M EG Value 1.02 1.00E-03 1.20 0.48 0.53 Parameter RS CJO FC XTI Value 0.23 7.20E-11
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SBS006M
80E-06
00E-06
00E-09
60E-03
00E-03
20E-11
SBS006M
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SBS006M
Abstract: No abstract text available
Text: 注文コード No. N 7 6 6 9 SBS006M 三洋半導体データシート N SBS006M ショットキバリアダイオード 30V, 0.5A 整流素子 用途 ・スイッチングレギュレータ・コンバータ・チョッパ等の高周波回路整流用。
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SBS006M
100mA,
600mm2
Duty10%
100mA
IT00633
IT00632
IT06662
SBS006M
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13003 MOSFET
Abstract: sw 13003 13003 MOSFET transistor transistor sd 13003 MARKING QV 13003 sd sw 13003 A MOSFET CPH5819 MCH3408 SBS006M
Text: Ordering number : ENN7409 CPH5819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5819 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3408 and a Schottky Barrier Diode (SBS006M) 2171
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ENN7409
CPH5819
MCH3408)
SBS006M)
CPH5819]
13003 MOSFET
sw 13003
13003 MOSFET transistor
transistor sd 13003
MARKING QV
13003 sd
sw 13003 A MOSFET
CPH5819
MCH3408
SBS006M
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MCH3443
Abstract: MCH5809 SBS006M marking QJ
Text: Ordering number : ENN7525 MCH5809 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5809 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3443 and a Schottky Barrier Diode (SBS006M) 2195
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ENN7525
MCH5809
MCH3443)
SBS006M)
MCH5809]
MCH3443
MCH5809
SBS006M
marking QJ
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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EP51E
CPH6605
MCH6613
ECH8609
CPH3424
CPH3427
K3614
FW343
FW356
FW360
on line ups circuit diagrams
2SK3850
242M
SSFP package
K3492
3ln03
MCH3435
CPH5612
three phase on line ups circuit diagrams
TN6R04
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CPH5804
Abstract: MCH3312 SBS006M IT03222
Text: 注文コード No. N 6 9 8 0 CPH5804 No. N 6 9 8 0 62001 新 CPH5804 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 ・P チャネル MOS 形電界効果トランジスタ
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CPH5804
MCH3312)
SBS006M
600mm2
IT00633
IT00632
IT00634
IT00635
CPH5804
MCH3312
SBS006M
IT03222
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN0000 CPH5706 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH5706 DC / DC Converter Applications Preliminary unit : mm 2156 5 4 0.15 3 0.2 [CPH5706] 2.9 0.05 0.6 • Composite type with a PNP transistor and a schottky
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ENN0000
CPH5706
CPH5706]
CPH5706
CPH3115
SBS006,
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TA-3808
Abstract: CPH5820 D2503 MCH3308 SBS006M
Text: 注文コード No. N 7 3 8 2 CPH5820 三洋半導体データシート N CPH5820 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 ・P チャネル MOS 形電界効果トランジスタ
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CPH5820
MCH3308
SBS006M
600mm2
IT00633
IT00632
IT00634
IT00635
TA-3808
CPH5820
D2503
MCH3308
SBS006M
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EN6354
Abstract: CPH3114 CPH6702 SBS006 TA267
Text: Ordering number:EN6354 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH6702 DC/DC Converter Applications Package Dimensions unit:mm 2153A 0.15 2.9 5 4 0.6 6 0.2 [CPH6702] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky
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EN6354
CPH6702
CPH6702]
CPH6702
CPH3114
SBS006,
EN6354
SBS006
TA267
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SBS006
Abstract: CPH3115 CPH5706 ta328
Text: Ordering number : ENN7025 CPH5706 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH5706 DC / DC Converter Applications unit : mm 2156 5 4 0.15 3 0.2 [CPH5706] 2.9 0.05 0.6 • Composite type with a PNP transistor and a Schottky
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ENN7025
CPH5706
CPH5706]
CPH5706
CPH3115
SBS006,
SBS006
ta328
|
marking SA
Abstract: No abstract text available
Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)
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ENN7029
SBS806M
SBS806M
SBS006.
SBS806M]
marking SA
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)
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ENN7029
SBS806M
SBS806M]
SBS806M
SBS006.
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Untitled
Abstract: No abstract text available
Text: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171
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ENN6980
CPH5804
MCH3312)
SBS006M)
CPH5804]
|
Untitled
Abstract: No abstract text available
Text: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions • Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006) 2171
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CPH5805
MCH3412)
SBS006)
CPH5805]
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