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    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9-BIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 – JUNE 1992 – REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, SN74BCT899 PDF

    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9ĆBIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 − JUNE 1992 − REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, PDF

    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9-BIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 – JUNE 1992 – REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, PDF

    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9ĆBIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 − JUNE 1992 − REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, PDF

    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9ĆBIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 − JUNE 1992 − REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, SN74BCT899 PDF

    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9-BIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 – JUNE 1992 – REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, PDF

    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9ĆBIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 − JUNE 1992 − REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, PDF

    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9ĆBIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 − JUNE 1992 − REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, PDF

    SN74BCT899

    Abstract: 3 bit parity generator application of parity checker
    Text: SN74BCT899 9-BIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 – JUNE 1992 – REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, SN74BCT899 3 bit parity generator application of parity checker PDF

    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9ĆBIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 − JUNE 1992 − REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, PDF

    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9-BIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 – JUNE 1992 – REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, SN74BCT899 PDF

    SN74BCT899

    Abstract: SN74BCT899DW SN74BCT899DWR
    Text: SN74BCT899 9-BIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 – JUNE 1992 – REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, SN74BCT899 SN74BCT899DW SN74BCT899DWR PDF

    SN74BCT899

    Abstract: SN74BCT899DW SN74BCT899DWR
    Text: SN74BCT899 9ĆBIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER SCBS253 − JUNE 1992 − REVISED NOVEMBER 1993 • • • • • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    Original
    SN74BCT899 SCBS253 MIL-STD-883C, SN74BCT899 SN74BCT899DW SN74BCT899DWR PDF

    SN74BCT899

    Abstract: No abstract text available
    Text: SN74BCT899 9-BIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER S C BS253-JUN E 1 9 9 2 - REVISED NOVEMBER 1993 I • I I I • State-of-the-Art BICMOS Design Significantly Reduces Iccz • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds


    OCR Scan
    SN74BCT899 BS253-JUN MIL-STD-883C, PDF