double Silicon NPN Phototransistor

Abstract: all datasheet phototransistor Infrared Phototransistor phototransistor 600 nm se2460 SD2440 SE2470 DSA0020271
Contextual Info: 17 September 1997 SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48¡ acceptance angle • Wide operating temperature range -55¡C to +125¡C • Ideal for direct mounting to printed circuit boards

double Silicon NPN Phototransistor

Abstract: phototransistor npn se2460 SD2440 SE2470 sd244
Contextual Info: SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48¡ acceptance angle • Wide operating temperature range - 55¡C to +125¡C • Ideal for direct mounting to printed circuit boards • Wide sensitivity ranges

Contextual Info: SD2440 Silicon Phototransistor FEATU R ES • Miniature, herm etically-sealed, pill style, metal can package • 48° acceptance angle • W ide operating tem perature range -55°C to +125°C • Ideal for direct m ounting to printed circuit boards • W ide sensitivity ranges

Contextual Info: SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48° acceptance angle . Wide operating temperature range -55°C to +125°C • Ideal for direct mounting to printed circuit boards • Wide sensitivity ranges

Contextual Info: SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically-sealed, pill style, metal can package • 48° acceptance angle • Wide operating temperature range -55°C to +125°C • Ideal for direct mounting to printed circuit boards • Wide sensitivity ranges

HOA1160-2

Abstract: HOA1404-2 HOA1404-3 HOA1160-1 HOA1160-3 HOA1160 HOA1180-3 reflective photo sensor HOA1180-1 HOA1180-2
Contextual Info: I HONEYWELL INC/ MICRO 41E D • 4S51630 0013663 0 ■ H0N17=^ ' ^ i T-HI-73 Assemblies Reflective With Hermetic Components Honeywell offers the world’s largest line of reflective assemblies built with hermetic components. HOA1160 uses components from the SE2450IRED, SD2440

SD2440

Contextual Info: SD2440 Silicon Phototransistor FEATURES + Miniature', hermetically sealed, pil style, metal can package ' 48r acceplance an^e » Wide cpara.ting temperature ranga -55 C Id + 125' Cl ' Ideal lor direct rmunling bo pcinled circuit boards ia g » Wideaenartiwty ranges

Reflective Optical Sensor focused

Abstract: HOA1406 HOA1406-001 SE2460 SD2410 SD2440
Contextual Info: HOA1406 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile package • Hermetic style emitter and detector • Focused for maximum response • 24.0 in. 610 mm min. 26 AWG Teflon insulated lead wires INFRA-84.TIF

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

H0A14

Contextual Info: HOA1406 Reflective Sensor tNfRA-84.TIF DESCRIPTION OUTLINE DIMENSIONS in inches mm The HOA1406 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1406-001) or photodarlington (HOA1406-003) encased side-by-side on converging optical axes, in a

H0A14

Abstract: reflective sensor 11LOAD
Contextual Info: H0A1406 Ultra Thin Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile package • Hermetic style emitter and detector • Focused for maximum response • 24 in. 610 mm min. 26 AWG PVC insulated wire leads DESCRIPTION

HOA1406-003

Abstract: HOA1406 HOA1406-001 SD2410 SD2440 SE2460 Reflective Optical Sensor IR
Contextual Info: HOA1406-003 HOA Series Reflective Sensor, Darlington Output, Metal Can Packaged Components Actual product appearance may vary. Features Choice of phototransistor or photodarlington output ● Low profile package ● Hermetic style emitter and detector ● Focused for maximum response

Contextual Info: SV2637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VC SEL FEATURES • Miniature, pill style package • 4° nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance • Ideal for high resolution applications

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

HOA1160

Abstract: HOA1160-001 hoa1160-002 HOA1160-003
Contextual Info: HOA1160 Reflective Sensor FEATURES • Choice o f phototransistor o r photodarlington output • Focused for maxim um response • W ide operating tem perature range -55°C to + 1 0 0 °C • Low profile to facilitate stacking I I D ESCRIPTION This com pact reflective sensor consists of an infrared

SD2410

Abstract: SD2420 SD2440 SE2470
Contextual Info: SE2470 AlGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 18¡ nominal beam angle • Wide operating temperature range (- 55¡C to +125¡C) • Higher power output than GaAs at equivalent drive currents

se2460

Abstract: SD2410 SD2420 SD2440
Contextual Info: SE2460 GaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 18¡ nominal beam angle • Wide operating temperature range (- 55¡C to +125¡C) • Ideal for direct mounting to printed circuit boards • 935 nm wavelength

VCSEL phototransistor

Abstract: SV2637-001 1040-11 850 nm LED SD2420 SD2440 VCSEL 850 nm
Contextual Info: 17 September 1997 SV2637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • Miniature, pill style package • 4¡ nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance

Contextual Info: SE2470 AIGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 18° nominal beam angle • Wide operating temperature range (-55°C to +125°C) • Higher power output than GaAs at equivalent drive currents

Contextual Info: SV2637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • Miniature, pill style package • 4° nominal emission angle • Designed for low drive currents (7-15 mA) . High output vs Input current performance » Ideal for high resolution applications

p8525

Abstract: diode S428 P8526
Contextual Info: Contents Page Page O P TO SCH M ITT D E T E C T O R S INTRODUCTION SD5600/5610. 146 SD5620/5630. 150 SDP8004/8014 . 154

SE2470-001

Contextual Info: SE2470 AIGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically-sealed, pill style, metal can package • 18° nominal beam angle • Wide operating temperature range (-55°C to +125°C) • Higher output power than GaAs at equivalent drive currents

TRANSISTOR ED203

Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Contextual Info: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the

HOA1160

Abstract: H0A1160 Reflective Optical Sensor focused HOA11 HOA1160-003
Contextual Info: HOA1160 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range -55°C to +100°C • Low profile to facilitate stacking DESCRIPTION This compact reflective sensor consists of an infrared