SDF360 Search Results

Contextual Info: PRODUCT C A T A L O G _ . ^ S l i t r o i l ogy,^ ,nc \K7 :{%f N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0.2 1Q 5DF360 SDF360 SDF360 5DF360 PARAMETER JEA JEB JEC JED • RUGGED PACKAGE •H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS

Contextual Info: PRODUCT CÂTÂlûi Æ iition N-CHANNEL ENHANCEMENT MOS FET 400V, 2 5 A , 0.21Q SDF360 SDF360 SDF360 SDF360 RGS=1.0Mn (1 ) RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

Contextual Info: SDF360JEBVGSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55

Contextual Info: SDF360JEAEHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55

Contextual Info: SDF360JEASGU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55

Contextual Info: SDF360JEBSHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55

Contextual Info: SDF360JECSHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55

Contextual Info: SDF360JECSHSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55

Contextual Info: SDF360JECSHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55

Contextual Info: SDF360JECVHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55

JEC 400

Abstract: N-Channel mosfet 400v 25A SDF360 1D-14a DIODE ED 99
Contextual Info: PRODUCT CÂTÂL ^ » l i t r o n DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0 .2 1 Q SDF360 SDF360 SDF360 SDF360 JEA JEB JEC JED FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS