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    Infineon Technologies AG SDP06S60

    DIODE SIL CARB 600V 6A TO220-3-1
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    SDP06S60 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDP06S60 Infineon Technologies Silicon Carbide Schottky Diode Original PDF
    SDP06S60 Infineon Technologies 6A diode in T-220 package Original PDF
    SDP06S60 Infineon Technologies Schottky Diode, 600V, 6A, Silicon Diode, Stamping Code:D06S60 Original PDF

    SDP06S60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    d06s60

    Abstract: T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60
    Text: SDP06S60, SDB06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		SDP06S60, SDB06S60 SDT06S60 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60 PDF

    d06s60

    Abstract: D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435
    Text: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary V VRRM 600  Revolutionary semiconductor material - Silicon Carbide  Switching behavior benchmark Qc 21 nC  No reverse recovery


    Original     		SDP06S60, SDB06S60 SDT06S60 P-TO220-2-2. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435 PDF

    SDP06S60

    Abstract: No abstract text available
    Text: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		SDP06S60 SDT06S60 PG-TO220-2-2. P-TO220 P-TO220-3 Q67040-S4371 Q67040-S4446 PDF

    d06s60

    Abstract: D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd
    Text: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary  Revolutionary semiconductor V 600 VRRM material - Silicon Carbide  Switching behavior benchmark Qc 21 nC  No reverse recovery


    Original     		SDP06S60, SDB06S60 SDT06S60 P-TO220-2-21. P-TO220-3 P-TO220-3-1. SDP06S60 Q67040-S4371 D06S60 d06s60 D06S60C to220 pcb footprint smd diode marking code UJ T-1228 s4371 SDT06S60 SDB06S60 SDP06S60 AG Qc smd PDF

    d06s60

    Abstract: D06S60C SDT06S60 SDP06S60 Schottky diode TO220 T-1228 diode schottky 600v Q67040-S4446 600 V power Schottky silicon carbide diode PG-TO220-2-2
    Text: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		SDP06S60 SDT06S60 PG-TO220-2-2. P-TO220 P-TO220-3 Q67040-S4371 D06S60 d06s60 D06S60C SDT06S60 SDP06S60 Schottky diode TO220 T-1228 diode schottky 600v Q67040-S4446 600 V power Schottky silicon carbide diode PG-TO220-2-2 PDF

    Q67040-S4371

    Abstract: D06S60 P-TO220-3 SDT06S60 Q67040-S4446
    Text: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		SDP06S60 SDT06S60 PG-TO220-2-2. P-TO220-3 P-TO220-3 Q67040-S4371 Q67040-S4446 D06S60 SDT06S60 Q67040-S4446 PDF

    d06s60

    Abstract: No abstract text available
    Text: SDP06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		SDP06S60 SDT06S60 PG-TO220-2-2. PG-TO220-3-1. Q67040-S4371 Q67040-S4446 d06s60 PDF

    Q67040-S4370

    Abstract: No abstract text available
    Text: SDP06S60 SDB06S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF


    Original     		SDP06S60 SDB06S60 P-TO220-3 P-TO220-3-1 Q67040-S4371 D06S60 Q67040-S4370 PDF

    SIPC69N60C3

    Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
    Text: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78


    Original     		SDP06S60 SDP04S60 SDB10S30 BTS555 BTS550P BTS650P BTS114A BSP78 BTS115A BTS134D SIPC69N60C3 SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822 PDF

    03N60C3

    Abstract: SPD03N60C3
    Text: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2


    Original     		SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 03N60C3 SPD03N60C3 PDF

    04N60C3

    Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
    Text: SPD04N60C3 SPU04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


    Original     		SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3 PDF

    D06S60

    Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
    Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery


    Original     		SDB06S60 Q67040-S4370 D06S60 D06S60 Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a PDF

    07N60

    Abstract: 07N60C3
    Text: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60 07N60C3 PDF

    SPW47N60C3

    Abstract: 47n60c3
    Text: SPW47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances


    Original     		SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 SPW47N60C3 47n60c3 PDF

    07n60c2

    Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
    Text: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)


    Original     		SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2 PDF

    SPA11N60C2

    Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60
    Text: Preliminary data SPA11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated


    Original     		SPA11N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4332 11N60C2 SPA11N60C2 AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60 PDF

    07N60C2

    Abstract: s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c
    Text: Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated


    Original     		SPP07N60C2, SPB07N60C2 SPA07N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP07N60C2 Q67040-S4309 07N60C2 s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c PDF

    20n60c2

    Abstract: 2002-08-12 spp20n60 SPA20N60C2 SPB20N60C2 SPP20N60C2
    Text: Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best R DS on in TO 220 • Ultra low gate charge R DS(on) 0.19 Ω 20 A ID • Periodic avalanche rated


    Original     		SPP20N60C2, SPB20N60C2 SPA20N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C2 Q67040-S4320 20n60c2 2002-08-12 spp20n60 SPA20N60C2 SPB20N60C2 SPP20N60C2 PDF

    04n60c3

    Abstract: 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01
    Text: SPA04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.95 Ω


    Original     		SPA04N60C3 P-TO220-3-31 P-TO220-3-31 Q67040-S4413 04N60C3 04n60c3 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01 PDF

    04n60c3

    Abstract: 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3
    Text: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4366 04N60C3 04n60c3 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3 PDF

    04N60C3 equivalent

    Abstract: 04n60c3 04N60C 04n60 IT 239 P-TO252 SDP06S60 SPD04N60C3 SPU04N60C3
    Text: SPD04N60C3 SPU04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 equivalent 04n60c3 04N60C 04n60 IT 239 P-TO252 SDP06S60 SPD04N60C3 SPU04N60C3 PDF

    07n65c3

    Abstract: PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3 V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3 SPP07N65C3 07n65c3 PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A PDF

    07N60C3

    Abstract: No abstract text available
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3 PDF

    smd diode marking G12

    Abstract: SPA07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 smd diode marking G12 PDF