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    35N06

    Abstract: C293 SEFH35H06 G7E Diode SEFH35N05
    Text: S G S-THÔMSÔN Q?E D 73C 1 7 5 6 8 7c15ciE37 OOlfl071 □ D T v^ -U » SEFH35N05 SEFH35H06 SEFM35N05 SEFH35N06 W ' i l H N -G H A N N El POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		OOlfl071 SEFH35N05 SEFH35H06 SEFM35N05 SEFH35N06 0V/60V 35N06 SGSP491 C-293 C293 G7E Diode PDF