Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SEMIX252GB126HDS Search Results

    SF Impression Pixel

    SEMIX252GB126HDS Price and Stock

    SEMIKRON SEMIX252GB126HDS

    Igbt Module, Dual, 1.2Kv, 242A; Continuous Collector Current:242A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX252GB126HDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX252GB126HDS Bulk 6
    • 1 -
    • 10 $133.88
    • 100 $122.41
    • 1000 $122.41
    • 10000 $122.41
    		Buy Now

    SEMIKRON SEMIX252GB126HDS 27890680

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX252GB126HDS 27890680 1
    • 1 $411.78
    • 10 $325.54
    • 100 $293.2
    • 1000 $293.2
    • 10000 $293.2
    		Get Quote

    SEMIX252GB126HDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMIX252GB126HDS Semikron Trench IGBT Modules Original PDF

    SEMIX252GB126HDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX252GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 242 A Tc = 80°C 170 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 228 A Tc = 80°C 158 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


    Original     		PDF SEMiX252GB126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX252GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX252GB126HDs E6353SEMiX252GB126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX252GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C


    Original     		PDF SEMiX252GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX252GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX252GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		PDF SEMiX252GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX252GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX252GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX252GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX252GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V


    Original     		PDF SEMiX252GB126HDs SEMiX252GB126HDs E63532 Inv11:

    Untitled

    Abstract: No abstract text available
    Text: SEMiX252GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX252GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		PDF SEMiX252GB126HDs SEMiX252GB126HDs E63532

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1