Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SEMIX402GB066HDS Search Results

    SF Impression Pixel

    SEMIX402GB066HDS Price and Stock

    SEMIKRON SEMIX402GB066HDS

    Igbt Module, Dual, 600V, 530A; Continuous Collector Current:530A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:45W; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SEMIX402GB066HDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX402GB066HDS Bulk 6
    • 1 -
    • 10 $140.85
    • 100 $128.77
    • 1000 $128.77
    • 10000 $128.77
    		Buy Now
    Richardson RFPD SEMIX402GB066HDS 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SEMIKRON SEMIX402GB066HDS 27891100

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX402GB066HDS 27891100 1
    • 1 $433.6
    • 10 $342.2
    • 100 $308.19
    • 1000 $308.19
    • 10000 $308.19
    		Get Quote

    SEMIX402GB066HDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMIX402GB066HDS Semikron Trench IGBT Modules Original PDF

    SEMIX402GB066HDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 509 A Tc = 80°C 383 A 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 543 A Tc = 80°C 397 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


    Original     		PDF SEMiX402GB066HDs

    cal 3200

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 509 A Tc = 80 °C 383 A 400 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX402GB066HDs E63532 cal 3200

    Untitled

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX402GB066HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C


    Original     		PDF SEMiX402GB066HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V


    Original     		PDF SEMiX402GB066HDs SEMiX402GB066HDs E63532

    current source inverter

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 509 A Tc = 80 °C 383 A 400 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX402GB066HDs E63532 B100/125 R100exp B100/125 1/T-1/T100) current source inverter

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1