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    SEMIX854GB176HDS Search Results

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    SEMIX854GB176HDS Price and Stock

    SEMIKRON SEMIX854GB176HDS

    Igbt Module, Dual, 1.7Kv, 779A; Continuous Collector Current:779A; Collector Emitter Saturation Voltage:2V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.7Kv Rohs Compliant: Yes |Semikron SEMIX854GB176HDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX854GB176HDS Bulk 4
    • 1 $459.42
    • 10 $446.57
    • 100 $420.87
    • 1000 $420.87
    • 10000 $420.87
    		Buy Now

    SEMIKRON SEMIX854GB176HDS 27890510

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX854GB176HDS 27890510 1
    • 1 $1330.17
    • 10 $979.96
    • 100 $910.34
    • 1000 $910.34
    • 10000 $910.34
    		Get Quote

    SEMIX854GB176HDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMIX854GB176HDS Semikron Trench IGBT Modules Original PDF

    SEMIX854GB176HDS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX854GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 779 A Tc = 80 °C 549 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 10 µs -55 . 150 °C


    Original     		SEMiX854GB176HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX854GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 779 A Tc = 80°C 549 A 1200 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 740 A Tc = 80°C 496 A ICRM = 2xICnom VGES SEMiX 4s Trench IGBT Modules


    Original     		SEMiX854GB176HDs PDF

    SEMIX854GB176HDS

    Abstract: No abstract text available
    Text: SEMiX854GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 779 A Tc = 80 °C 549 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C


    Original     		SEMiX854GB176HDs SEMIX854GB176HDS PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX854GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 779 A Tc = 80 °C 549 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules SEMiX854GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V


    Original     		SEMiX854GB176HDs SEMiX854GB176HDs E63532 PDF

    SEMIX854GB176HD

    Abstract: SEMIX854GB176HDs
    Text: SEMiX854GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 779 A Tc = 80 °C 549 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C


    Original     		SEMiX854GB176HDs SEMIX854GB176HD SEMIX854GB176HDs PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 PDF