Untitled
Abstract: No abstract text available
Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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SEP8526
SDP8406/8426
SDP8106
SDP8000/8600
SEP8526
SDP8426
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sep8526-002
Abstract: No abstract text available
Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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OCR Scan
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PDF
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SEP8526
SDP8406/8426
SDP8106
SDP8000/8600
SEP8526
SDP8426
sep8526-002
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SEP8526
Abstract: sep8526-002 diode honeywell
Text: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106
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001bb7S
SEP8526
SDP8406/8426
SDP8106
SDP8000/8600
SEP8526
0Dlbb77
SDP8426
sep8526-002
diode honeywell
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TIL149
Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55
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GQ133Ã
CLA60.
C-101-C
CLA60AA
C-101-B
CLA60AB
C-101-A
CLA65.
C-102
CLA65AA
TIL149
HOA708-1
S-180-a55
SPX2862
HS-230-40W
HOA708
SLOTTED OPTICAL SWITCH
HOA1160
h0a2001
A11W
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P8706
Abstract: SEP8526
Text: SDP8426 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506/8526 and SE P8706 infrared emitting diodes DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8426 is an N PN silicon phototransistor molded
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SDP8426
SEP8506/8526
P8706
SDP8426
SEP8526
SEP8526
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SE-5470-3
Abstract: SE3470-3 SE5450-13 SE5450-12 SE1450-3L SEP8525-1 SE-5470-4 se5470-3 SE3450-11 SEP8526-2
Text: HONEYWELL INC/ MICRO 41E D • 4551630 OOlBöbl 1 « H 0 N 1 “T -q \ - l \ Infrared Emitting Diodes Honeywell infrared emitting diodes are solid state components. They emit near infrared radiation when forward biased. IREDs are generally continuously operated DC to provide a high
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SEP8505-1
SEP8505-2
SEP8505-3
SEP8505-4
SEP8525-1
SEP8525-2
SEP8705-1
SEP8705-2
SEP8705-3
SEP8506-1
SE-5470-3
SE3470-3
SE5450-13
SE5450-12
SE1450-3L
SE-5470-4
se5470-3
SE3450-11
SEP8526-2
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SDP8426
Abstract: DG10C
Text: SDP8426 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8426 is an NPN silicon phototransistor molded
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OCR Scan
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PDF
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SDP8426
SEP8506/8526
SEP8706
SDP8426
DG10C
SEP8526
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