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    Infineon Technologies AG SKB06N60HSATMA1

    IGBT 600V 12A 68W TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SKB06N60HSATMA1 Reel 1,000
    • 1 -
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    • 100 -
    • 1000 $1.22234
    • 10000 $1.15675
    Buy Now

    SKB06N60HS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SKB06N60HS Infineon Technologies 1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon diode in only one package. Original PDF
    SKB06N60HSATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 12A 68W TO263-3 Original PDF

    SKB06N60HS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS K06N60HS P-TO-220-3-45 SKB06N60HS

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS O-263AB Q67040-S4544 P-TO-263-3-2 O-263AB) SKB06N60HS Aug-02

    K06N60

    Abstract: k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS
    Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS PG-TO-263-3-2 K06N60HS K06N60 k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS

    Untitled

    Abstract: No abstract text available
    Text: SIGC07T60UN High Speed IGBT Chip in NPT-technology C FEATURES: • • • • • • This chip is used for: • SKB06N60HS low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC07T60UN


    Original
    PDF SIGC07T60UN SKB06N60HS Q67050-A4220A101 7212U,

    SIGC07T60UN

    Abstract: SKB06N60HS
    Text: SIGC07T60UN High Speed IGBT Chip in NPT-technology C FEATURES: • • • • • • This chip is used for: • SKB06N60HS low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC07T60UN


    Original
    PDF SIGC07T60UN SKB06N60HS Q67050-A4220A101 7212U, SIGC07T60UN SKB06N60HS

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS K06N60HS P-TO-263-3-2 Q67040S4544 P-TO-263-3-2 O-263AB) SKB06N60HS

    K06N60

    Abstract: No abstract text available
    Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS K06N60HS P-TO-220-3-45 SKB06N60HS K06N60

    25E-4

    Abstract: SKB06N60HS
    Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    PDF SKB06N60HS P-TO-263-3-2 O-263AB) O-263AB Q67040-S4544 Oct-02 25E-4 SKB06N60HS

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation G E • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:


    Original
    PDF SKB06N60HS O-263AB Q67040-S4544 Jun-02

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original
    PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original
    PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original
    PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3