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    SMG2317P

    Abstract: JAN p-channel mosfet transistor low power
    Text: SMG2317P -0.9 A, -30 V, RDS ON 300 mļ— P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of ā€œ-Cā€ specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density process. Low RDS(on) assures minimal power loss


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    PDF SMG2317P SC-59 05-Jan-2011 SMG2317P JAN p-channel mosfet transistor low power